Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Uedono, Akira; Fujishima, Tatsuya; Cao, Yu; Zhang, Yang; Yoshihara, Nakaaki; Ishibashi, Shoji; Sumiya, Masatomo; Laboutin, Oleg; Johnson, Wayne; Palacios, Tomás

doi:10.1063/1.4866966

Cited by 23 publications

(24 citation statements)

References 19 publications

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“…A similar increase of S above a photon energy of 2.7 eV has been reported for unintentionally C-doped GaN. 43,44 Because the bandgap of Al 0.1 Ga 0.9 N is larger than that of GaN, the separation between the increases in S at BL band and NBE was clearly observed in the present experiment. The electron capturing by vacancy-type defects can be divided into direct and indirect processes.…”

Section: Methodssupporting

confidence: 68%

“…27 The (S,W) values for defect free (DF)-GaN, DF-Al 0.1 Ga 0.9 N, and typical defects in GaN simulated using the QMAS code are also shown. 27,33,43,44 In this figure, a Ga vacancy V Ga (or (V Ga ) 2 ) coupled with nitrogen vacancies V N s, carbon, and oxygen at nitrogen sites is shown as , the S values measured under illumination are located on a straight line. This means that the probed defect species in those samples are the same.…”

Section: Methodsmentioning

confidence: 99%

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Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Uedono

Zhao

Simoen

2016

Journal of Applied Physics

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Articles you may be interested inProbing the effect of point defects on the leakage blocking capability of Al 0.1 Ga 0.9 N/Si structures using a monoenergetic positron beam ) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al 0.1 Ga 0.9 N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (C N s). The charge state of the vacancies was positive because of the electron transfer from the defects to C N -related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by C N -related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and C N -related acceptors. Published by AIP Publishing. [http://dx

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Section: Methodssupporting

confidence: 68%

Section: Methodsmentioning

confidence: 99%

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Uedono

Zhao

Simoen

2016

Journal of Applied Physics

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“…In Figure and , the S values were increased by the illumination of the He‐Cd laser. For GaN grown on a Si substrate and Mg‐implanted GaN, the increase in the S value under illumination was previously reported, and the increase in the S value was attributed to the transition in the charge state of vacancy‐type defects ( V ) from positive to neutral (or neutral to negative), V + → V 0 (or V 0 → V − ). This resulted in an increase in the trapping probability of positrons.…”

Section: Resultsmentioning

confidence: 55%

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Uedono

Iguchi

Narita

et al. 2019

Physica Status Solidi (b)

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Vacancy-type defects in Mg-implanted GaN with and without hydrogen (H) implantation are probed by using monoenergetic positron beams. Mg þ and H þ ions are implanted into GaN(000 1) to obtain 0.1 and 0.7-mm-deep box profiles with Mg and H concentrations of 1 Â 10 19 and 2 Â 10 20 cm À3 , respectively. For the as-implanted samples, the major defect species is determined to be Gavacancy (V Ga ) related defects such as V Ga , divacancy (V Ga V N ), and their complexes with impurities. For Mg-implanted samples, an agglomeration of vacancies starts at 800 C annealing, leading to the formation of vacancy clusters such as (V Ga V N ) 3 . For the samples annealed above 1000 C, the trapping rate of positrons by vacancies is increased by illumination of a He-Cd laser. This is attributed to the capture of photon-excited electrons by the defects and their charge transition. For Mg-and H-implanted samples, the hydrogenation of vacancy-type defects starts after 800 C annealing. Comparing with the annealing behavior of defects for the samples without H-implantation, the clustering of vacancy-type defects is suppressed, which can be attributed to the interaction between Mg, H, and vacancies.

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“…Suihkonen et al [56] also noted that the YL band in GaN is not related to Ga vacancies because no increase of the YL intensity with increasing concentration of V Ga was observed. In spite of the contradictory data regarding the correlation between the YL intensity and the concentration of the V Ga -containing defects, the idea that the YL band is caused by the V Ga O N complex, at least in some GaN samples, is still widespread [57,58]. This attribution is based on the results of early DFT calculations [38,39].…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 90%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C N defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the C N O N complex.

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Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Cited by 23 publications

References 19 publications

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

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