Optically detected cyclotron resonance of GaAs quantum wells

Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields

“…Calculated results for the m c cyclotron effective mass as a function of the width of the GaAs-Ga 0.65 Al 0.35 As QW are depicted in Fig. 2 and compared with experimental results by Singleton et al [2] and Michels et al [3]. Theoretical results are for small values of the applied magnetic field (B ≈ 0), and for the m = 1, n = 0 Landau level.…”

“…On the other hand, experimental measurements of both the Landé g-factor and cyclotron effective mass provide an excellent tool for testing theoretical predictions of band-structure electronic calculations in low-dimensional semiconductor heterostructures. In that respect, in this study we present a theoretical model which is used to give a proper physical and quantitative explanation of a series of experiments involving quantum beats and optically detected cyclotron resonance (ODCR) techniques applied in the measurements of g-factors and cyclotron effective masses of semiconductor GaAs-Ga 1−x Al x As QWs under growth-direction applied magnetic fields [2][3][4][5].…”

“…On the other hand, experimental measurements of both the Landé g-factor and cyclotron effective mass provide an excellent tool for testing theoretical predictions of band-structure electronic calculations in low-dimensional semiconductor heterostructures. In that respect, in this study we present a theoretical model which is used to give a proper physical and quantitative explanation of a series of experiments involving quantum beats and optically detected cyclotron resonance (ODCR) techniques applied in the measurements of g-factors and cyclotron effective masses of semiconductor GaAs-Ga 1−x Al x As QWs under growth-direction applied magnetic fields [2][3][4][5].The Ogg-McCombe Hamiltonian, acting in the two-fold Γ 6c spin-degenerate conduction band of the bulk materials of the GaAs-Ga 1−x Al x As QW under an applied magnetic field parallel to the growth z-direction, is obtained within the effective-mass approximation and in fourth-order of k.p perturbation theory as [11][12][13][14][15][16][17][18] …”

“…This goal may be achieved by manipulating the electron g-factor in semiconductor heterostrucures and designing appropriate external gate control devices. The cyclotron effective mass and electronic g-factor are of importance in possible applications and in the interpretation of experimental data in specific research fields such as magneto-optical and magneto-transport studies, optically detected nuclear-resonance experiments, spin electronics and quantum beats measurements, and in the fractional and integer quantum Hall effects [2][3][4][5][6].…”

“…The understanding of the physics of semiconductor single and multiple quantum wells (QWs), quantum-well wires (QWWs), quantum dots (QDs), and superlattices (SLs) has been of great interest, and several studies have been performed to elucidate the physical properties of these systems [1][2][3][4][5][6]. The possible use of electron spins in the architecture of a solid-state based quantum computer has raised special attention in the study of the behavior of the electron spin coupled with an external magnetic field.…”