Optically transparent indium-tin-oxide (ITO) ohmiccontacts in thefabrication of vertical-cavity surface-emitting lasers

Matin, Mohammad A.; Jezierski, A.; Bashar, S.A.; Lacklison, D. E.; Benson, T.M.; Cheng, T.S.; Roberts, J.S.; Sale, T.E.; Orton, John; Foxon, C. T.; Rezazadeh, A.A.

doi:10.1049/el:19940243

Cited by 34 publications

(12 citation statements)

References 6 publications

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“…ρ C = 17 µ cm 2 (for 450 • C) and 25 µ cm 2 (for 500 • C). From this study, we conclude that the optimal annealing temperature for the Ti/Au/ITO/GaAs interface is 500 • C. This leads to a specific resistance contact value twice higher than that obtained for a standard optimal contact annealed at 450 • C. It is worth noting that these results are not in agreement with the literature: indeed, Chua et al [10] reached an optimal specific contact resistance by annealing ITO/Mg-doped GaAs layers at a temperature higher than 600 • C and Matin et al [9] optimized the contact resistance at 550 • C in the case of an ITO/Zn-doped GaAs interface. To explain this discrepancy, further information on the annealing effects on the materials is needed.…”

Section: Electrical Properties Of Ito/gaas Contactmentioning

confidence: 86%

“…Most of the published work on ITO contacts deals with sputtering deposition and thermal postannealing optimization to obtain the best trade-off between the optical and electrical ITO properties, and between these characteristics and the technological constraints involved in device processing. Studies performed on ITO deposition usually conclude that the higher the annealing temperature, the higher the ITO intrinsic conductivity [7,8], although the best interface resistance of the ITO/GaAs contact is often reported for lower annealing temperatures, but for divergent values [9][10][11]. In this paper, we investigate the properties of ITO deposited on p-type Be-doped GaAs layers and particularly the effect of thermal annealing on the ITO/GaAs interface.…”

Section: Introductionmentioning

confidence: 99%

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Continuous wave lasing at 1.54 μm in a flashlamp-pumped ytterbium — erbium-doped glass

et al. 2003

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The effects of thermal annealing on optically transparent electrodes of ITO (indium tin oxide) contact deposited on p-type Be-doped GaAs have been investigated by means of the transfer length method and secondary ion mass spectroscopy measurements. This study shows that the temperature that minimizes the specific contact resistance of ITO/GaAs (500 • C) greatly differs from the temperature that leads to a maximum conductivity of the ITO layer (600 • C) and from the values reported on ITO/GaAs in the literature. The oxygen diffusion in the semiconductor layer and its interaction with the beryllium dopant is pointed out to explain these differences.

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Section: Electrical Properties Of Ito/gaas Contactmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Continuous wave lasing at 1.54 μm in a flashlamp-pumped ytterbium — erbium-doped glass

et al. 2003

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“…These include the use of ITO [12,13], Auplated ITO [14] as the top contact and ITO as top ring contact [15]. However, the effects of these new contact schemes on the VCSEL performances such as kink characteristics of L-I curve and modulation response were not clearly mentioned.…”

Section: Introductionmentioning

confidence: 99%

Improvement of kink characteristics performance of GaAs VCSEL with a indium-tin-oxide top transparent overcoating

Lai

Chang

Hsueh

et al. 2004

Materials Science and Engineering: B

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“…These include the use of ITO [15,16], Au-plated ITO [17] as the top contact and ITO as top ring contact [18]. However, the effect of these new contact scheme on the VCSEL performance such as kink characteristics of L-I curve, and modulation response were not clearly mentioned.…”

Section: Introductionmentioning

confidence: 99%

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

et al. 2004

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Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL.The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ~3 mA, and the slope efficiencies ~ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

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Optically transparent indium-tin-oxide (ITO) ohmiccontacts in thefabrication of vertical-cavity surface-emitting lasers

Cited by 34 publications

References 6 publications

Continuous wave lasing at 1.54 μm in a flashlamp-pumped ytterbium — erbium-doped glass

Continuous wave lasing at 1.54 μm in a flashlamp-pumped ytterbium — erbium-doped glass

Improvement of kink characteristics performance of GaAs VCSEL with a indium-tin-oxide top transparent overcoating

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

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