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The electrical, optical and spectral responses of optically transparent emitter InP/InGaAs heterojunction phototransistors (HPTs) fabricated using Indium Tin Oxide (ITO) are presented. These HPTs showed significantly increased optical responsivities while the electrical characteristics were similar to their respective opaque counterparts. Responsivities of 28A/W at 1310nm for the InPhGaAs HPTs were obtained. The spectral responses of these phototransistors were simulated and compared with the measured results and good correlation between the experiments and the theoretical models were obtained.