Optically transparent ITO emitter contacts in the fabrication of InP/InGaAs HPT's

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

“…The definitions of the parameters in the above equation can be found in [8]. The volume current J is related to the total electric flux D by J͑r͒ ϭ j͑͑r͒ Ϫ 0 ͒D͑r͒/͑r͒.…”

“…In the latter arrangement, a nonalloyed emitter-electrode metal was used as a reflector and light was illuminated through the InP substrate side. It has been also demonstrated that the collection efficiency can be increased by using indium tin oxide as a transparent emitter electrode [8]. The bandwidth and quantum efficiency of this transparent electrode HBT, however, is affected by the absorption in the emittercap layer.…”

Thermal Stability of Indium Tin Oxide/n-GaAs Heterostructures with and without Sulfur Passivation

“…The n-GaAs solar cells can be integrated with high speed GaAs to generate the required power. It has been used as a window contact for other semiconductors such as InP [8], GaN [9], InGaP [10], GaAs/AlGaAs [11], and In/InGaAs [12]. The electrical properties of ITO thin films have been recently reported in detail by Tahar et al [13].…”

A thermionic-field-diffusion model for Npn bipolar heterojunction phototransistors

“…5,6 An alternative to the PIN that has not been as extensively employed, but which is gaining increasing attention, is the bipolar heterojunction phototransistor ͑HPT͒. [7][8][9][10][11][12][13][14][15][16][17] In addition to its epitaxial and fabrication process compatibility with the HBT, the HPT offers the advantage of optical gain, which contributes to improved receiver sensitivity and signal-to-noise, and can offset signal loss due to nonideal alignment of the optical beam with the photodetector. To date, there have been few reports of HPT/HBT-based, long wavelength optical receivers.…”

“…[20][21][22] While these have shown some promise, they have generally shown insufficient high frequency capability due in part to large base widths and detector areas. 10,11,16,17 Typically, when the HPT has been employed as a photodetector, it has been operated in the two terminal ͑open base͒ configuration. 7,8,[23][24][25] Recently, there have been several reports of improved device performance when a dc bias was applied to the base ͑three terminal configuration͒.…”