Optimal DC-Link RC Snubber Design for SiC MOSFET Applications

Chen, Zheng; Rice, Julius; Shao, Jinghai; Hu, Yuquan

doi:10.1109/ecce.2019.8912877

Cited by 9 publications

(2 citation statements)

References 8 publications

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“…Firstly, snubber circuits, filters, ferrite beads as well as skilled circuit design, can be used to address some of the above issues. [80] has investigated the DC-link RC snubber design for SiC MOSFET applications to attenuate the turn-off voltage overshoot and oscillations, where the model and optimal parameters of the RC snubber across the dc-link are given. [81,82] discuss the use of snubber circuits for SiC MOSFETs and the effect of external snubber capacitors for soft-switching operation of SiC MOSFETs.…”

Section: Potential Solutions For High Frequency Sic Convertersmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

116

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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Section: Potential Solutions For High Frequency Sic Convertersmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

116

View full text Add to dashboard Cite

show abstract

“…The second-order and multiorder snubber circuits are other improved solutions. Yatsugi et al [18] and Chen et al [35] propose the method of optimal parameter selection of the RC snubber circuits. In [33], the detailed performances of the RC snubber circuits with SiC MOSFET are obtained and discussed by establishing the accurate analytical model.…”

mentioning

confidence: 99%

Overvoltage and Oscillation Suppression Circuit With Switching Losses Optimization and Clamping Energy Feedback for SiC MOSFET

Yang

Pei

Wang

et al. 2021

IEEE Trans. Power Electron.

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The snubber circuit is a cost-effective solution to reduce the severe turn-OFF overvoltage and oscillation caused by the fast switching characteristics of SiC MOSFET. However, the turn-ON switching losses will significantly increase as the snubber decouples the power loop parasitic inductance during the switching process. In this article, the effect of the power loop parasitic inductance on the switch performance of SiC MOSFETs and the quasizero voltage switching (QZVS) turn-ON condition are studied. On this basis, an SiC MOSFET overvoltage and oscillation suppression circuit (OVSC) with not only the switching losses optimization feature but also the clamping energy feedback characteristic is proposed. The overvoltage and oscillation can be effectively suppressed by clamping capacitors, and those capacitors do not participate in the switching process until the overvoltage occurs, which is of benefit to the switching losses reduction compared with the other normal snubber circuits. Besides, the turn-OFF overvoltage and oscillation energy stored in the clamping capacitors can be feedback to dc and load side through a passive branch composed of an energy feedback inductor and a diode. The experimental studies and comprehensive comparison studies are carried out to verify the validity of the proposed OVSC. The experimental results show that OVSC has excellent overvoltage and oscillation suppression performance and can significantly reduce the switching losses.

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The impact of DC-bus impedance on the switching performance of low-voltage silicon power MOSFETs

Vollmaier

Langbauer

Krischan

et al. 2023

Elektrotech. Inftech.

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Typical DC-bus stabilization for low-voltage power circuits consists primarily of ceramic capacitors due to the capacity density and low equivalent series resistance (ESR) resulting in low conduction losses. Particularly in hard-switching and hard-commutation operation, the low ESR and high equivalent series inductance (ESL) of the capacitors in the commutation path restrict the damping of the switch node voltage overshoot and introduce high-frequency ringing, reducing the voltage margin of the transistor. Therefore, this paper analyzes the impact of the DC-bus impedance and proposes a DC-bus snubber based on an RC network to form the DC-bus impedance’s characteristic, which minimizes the overshoot voltage. A comprehensive simulation using measurement-derived component models is shown, which is verified by an in-situ measurement on a test PCB. Furthermore, transient measurements using a double pulse test setup show the effectiveness of the proposed approach.

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Optimal DC-Link RC Snubber Design for SiC MOSFET Applications

Cited by 9 publications

References 8 publications

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Overvoltage and Oscillation Suppression Circuit With Switching Losses Optimization and Clamping Energy Feedback for SiC MOSFET

The impact of DC-bus impedance on the switching performance of low-voltage silicon power MOSFETs

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