Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhuang, Zhe; Iida, Daisuke; Kirilenko, Pavel; Ohkawa, Kazuhiro

doi:10.1364/oe.389725

Cited by 41 publications

(27 citation statements)

References 37 publications

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“…Our group first developed a high-temperature growth technique for high-indium-content InGaN layers [16,17], and then employed strain engineering strategies from Ga2O3 substrates [18] and GaN templates [19] to active region structures [20]. We also improved the electrical and optical properties of InGaN LEDs in device design and fabrication [21,22]. Since InGaN-based green and red µLEDs do not perform as well as blue µLEDs, investigation of green and red µLEDs is crucial to identify the direction for future improvements.…”

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confidence: 99%

Investigation of InGaN-based red/green micro-light-emitting diodes

2021

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We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98×98 to 17×17 µm 2 . The average forward voltage at 10 A/cm 2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blue-shift of the peak wavelength (~35 nm) and broader full-width at half maximum (≥50 nm) at 2 to 50 A/cm 2 compared to green µLEDs. We demonstrated that 47×47 µm 2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.

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Investigation of InGaN-based red/green micro-light-emitting diodes

2021

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“…One of the most popular methods to create WLED devices is freely dispensing the yellow phosphor yttrium aluminum garnet (YAG:Ce) onto a blue LED chip [5,6]. Nevertheless, the angular correlated color temperature achieved from this method is in poor quality and the "yellow ring" phenomenon that is disadvantageous to the light performance of WLED also occurs [7][8][9]. Researchers proposed various methods as solutions to these problems, for example, conformal-phosphor structure [10], adjusting the surface phosphor layer [11], lens design [12], and optimizing the structure of a WLED package [13,14].…”

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confidence: 99%

Investigation on the application of ZnO nanostructures to improve the optical performance of white light-emitting diodes

2021

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Though combining blue LED chips with yellow phosphor has been the most common method in white light-emitting diode (WLED) production, the attained angular correlated color temperature (CCT) uniformity is still poor. Thus, this article proposes to add ZnO nanostructures to WLED packages to promote the color uniformity of the WLEDs. The outcomes of the research demonstrate that utilizing ZnO at different amount can affect the scattering energy and the CCT deviations in WLEDs packages in different extents. Particularly, adding the node-like (N-ZnO), sheet-like (S-ZnO), and rod-like (R-ZnO) leads to the corresponding decreases of CCT deviations from 3455.49 K to 96.30 K, 40.03 K, and 60.09 K, respectively. Meanwhile, with 0.25% N-ZnO, 0.75% S-ZnO, and 0.25% R-ZnO, WLED devices can achieve both better CCT homogeneity and lower reduction in luminous flux. The results of this article can be a valuable document for the manufacturer to use as reference in improving their WLED products.

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“…Lighting devices that emit white light by converting phosphor materials (pc-LEDs) is an outstanding lighting solution with formidable performance in terms of life expectancy, manufacturing cost, lighting efficiency, endurance against impacts, and space-saving, thus, received growing attention in the lighting industry [1][2][3]. The white LED is expected to replace conventional lighting methods, although as the lighting demands evolve, the white light emitting diode (WLED) need to enhance their advantages while improving TELKOMNIKA Telecommun Comput El Control  The impacts of red-emitting phosphor Mg8Ge2O11F2:Mn 4+ on the color… (My Hanh Nguyen Thi) 951 the existing weakness [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

The impacts of red-emitting phosphor Mg8Ge2O11F2:Mn4+ on the color rendering index of convex-dual-layer remote phosphor WLEDs at 5600 K

2021

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The poor color rendering index (CRI) induced by mono chip and phosphor configuration in the conventional white-light light-emitting diode (LED) urges for developments in both packaging and material, thus, a modern lighting solution was introduced. The dual-layer phosphor package is an innovative configuration that can retain the lumen output of conventional white light emitting diode (WLED) while also enhancing color quality. The structure of dual-layer phosphor package that was proposed includes two chips and one phosphor. The priority in this research is to keep improving the lighting properties of WLED, therefore, further experiments with this dualchips and dual-phosphor package are conducted. The lighting properties of LED are measured multiple times with its nitride-based phosphor being altered in proportions and densities each occasion, the results are calculated with a color design model made specifically to monitor and adjust the color of white-light from LED to match desired outcome. The WLED at 5600 K correlated color temperature (CCT) is the sole research object of the experiments. The measured parameters from the 5600 K WLED and the color coordinates of CIE 1931 simulated from the color design model show that 0.0063 is the highest possible discrepancy at 5600 K (CCT). The information from this manuscript provide the manufacturers with the most efficient approach to create a white LED that has good color quality, high CRI and luminous flux.

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Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Cited by 41 publications

References 37 publications

Investigation of InGaN-based red/green micro-light-emitting diodes

Investigation of InGaN-based red/green micro-light-emitting diodes

Investigation on the application of ZnO nanostructures to improve the optical performance of white light-emitting diodes

The impacts of red-emitting phosphor Mg8Ge2O11F2:Mn4+ on the color rendering index of convex-dual-layer remote phosphor WLEDs at 5600 K

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