Optimisation of the reverse conducting IGBT for zero‐voltage switching applications such as induction cookers

Sheikhian, I.; Kaminski, Nando; Voß, S.; Scholz, W.; Herweg, E.

doi:10.1049/iet-cds.2013.0215

Cited by 14 publications

(5 citation statements)

References 28 publications

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“…20 This solution, which integrates the FWD into the IGBT structure, consists of dividing the anode p of the diode into several sections and the cathode n is integrated in the IGBT emitter. In this way, the antiparallel diode uses the same silicon wafer as the IGBT, 101 although there is no possibility of optimizing the diode independently of the IGBT. There is also the F I G U R E 5 Structure of the RC-IGBT technology possibility of integrating the diode by placing both structures, the IGBT and FWD, in parallel within the same wafer (pilot diode 102 ).…”

Section: Cell and Vertical Igbt Structure Technologiesmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Section: Cell and Vertical Igbt Structure Technologiesmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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“…Although the basic idea of RC‐IGBT has been proposed for three decades, Infineon released the first commercial RC‐IGBT device in 2014. In early stages, the discrete low‐voltage RC‐IGBTs are perfectly suited for the soft switching applications such as induction cooking stoves, rather than the hard‐switching circuits [57]. With the development of fabrication and semiconductor concept, the RC‐IGBTs are firmly entering the areas of high‐voltage and high‐power applications which are hard switching dominant.…”

Section: Technology Trend For More Reliable Power Semiconductors Ofmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

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This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

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“…The zero‐voltage switching technique has also been used for induction cookers nowadays. This type of soft switching activity has been carried out by reverse conducting – insulated gate bipolar transistor [14].…”

Section: Introductionmentioning

confidence: 99%

Electronic enhancement effect of doped ferromagnetic material in biomolecular heterojunction switch

Dey

Roy

2018

IET Circuits, Devices & Systems

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Density functional theory conjugated with non-equilibrium Green's function-based first principle approach is used to determine the ferromagnetic-doping effect in the current-voltage characteristics for the heterojunction biomolecular analytical structure. The quantum-mechanical transport phenomenon and multiple switching activities associated with sequential negative differential resistance properties have been observed for this adenine-thymine chain. The authors investigate the quantumtransport properties of conventional doping effect for ferromagnetic atoms in this bimolecular chain. The results show an electronic enhancement effect in quantum-ballistic conductivity for this chain along with sequential switching property. Among these ferromagnetic metals, Nickel shows significant transmission spectrum, sharp and prominent highest occupied molecular orbital (MO) and lowest unoccupied MO peak along with maximum quantum-ballistic current at room temperature. It is observed from the device density of states that large numbers of conducting channels are available for Nickel doping. This ensures high quantum-transmission current flow within the central molecular region for these ferromagnetic dopants. Compared to Iron and Cobalt, the current has been enhanced up to 4.05 times for Nickel dopant. High doping concentration (13.3%) has been introduced for this ab-initio model. It has found that the number of total switching process is increased during ferromagnetic doping mainly for Cobalt and Nickel dopants.

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Optimisation of the reverse conducting IGBT for zero‐voltage switching applications such as induction cookers

Cited by 14 publications

References 28 publications

The role of power device technology in the electric vehicle powertrain

The role of power device technology in the electric vehicle powertrain

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Electronic enhancement effect of doped ferromagnetic material in biomolecular heterojunction switch

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