2015
DOI: 10.1088/0022-3727/48/49/495204
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Optimization of deposition rate in HiPIMS by controlling the peak target current

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Cited by 42 publications
(22 citation statements)
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“…Figure 13 is a schematic diagram that explains the reasons for the small deposition rate: (a) ions return effect [45], which contributes to the accessible current caused by self-sputtering [46]; (b) yield effect [47]; (c) species effect [48]; (d) transport effect [49]; and (e) gas rarefaction effect [50]. In general, most of these factors strongly influence the deposition rate in HiPIMS when the pulse width is higher than 50 μs [51].…”
Section: Deposition Ratementioning
confidence: 99%
See 1 more Smart Citation
“…Figure 13 is a schematic diagram that explains the reasons for the small deposition rate: (a) ions return effect [45], which contributes to the accessible current caused by self-sputtering [46]; (b) yield effect [47]; (c) species effect [48]; (d) transport effect [49]; and (e) gas rarefaction effect [50]. In general, most of these factors strongly influence the deposition rate in HiPIMS when the pulse width is higher than 50 μs [51].…”
Section: Deposition Ratementioning
confidence: 99%
“…Based on the aforementioned loss routes in figure 13, the deposition rate in HiPIMS can be improved by (i) controlling the parameters of the pulse power supply, e.g. pulse voltage [50], pulse duration [40,52,53], repetition frequency [54], peak current [51,55,56], and peak power [54]. It is found that strong self-sputtering or the gas rarefaction process do not occur in short pulse durations in HiPIMS; (ii) modification of the magnetic field distribution in magnetron [49,[57][58][59]; and (iii) operation of the HiPIMS process in the multi-pulse mode, in which the metallic ion back attraction is efficiently limited [60].…”
Section: Deposition Ratementioning
confidence: 99%
“…The decrease in the deposition rate at 60 µs could be because of the yield effect and peak amplitude of discharge current caused by self-sputtering and working gas recycling (referring to the recycling of the ions of the inert working gas) [ 62 ]. Moreover, other factors like the ionic species effect and transport effect significantly influence the deposition rate in HiPIMS when the pulse width is higher than 50 s [ 63 ]. However, it was found that the impact of self-sputtering and gas rarefaction can be omitted by applying a shorter pulse width or using bipolar pulse mode.…”
Section: Resultsmentioning
confidence: 99%
“…The discharge was operated under a constant average target power of 45 W by varying the pulsing frequency. The deposition rate of SiO 2 thin film increased as the pulse duration decreased, due to reduced ion back-attraction effect [22]. Therefore, the deposition rates of the films deposited at 3, 5, and 10 µs were 4.2, 3.7, and 3.2 nm/min., respectively.…”
Section: Thin Film Characterizationmentioning
confidence: 93%