Optimization of Dual-Fuel Combustion Synthesis for Rapid Formation of Solution-Processed Metal-Oxide Thin-Film Transistors

Abstract

Solution processing of metal-oxide semiconductors has received significant attention in various fields of electronics owing to its advantages such as simple fabrication process, large-area scalability, and facile stoichiometric tunability. However, the conventional sol−gel route requires a relatively long annealing time to obtain a low-defect film with high density and sufficient amount of metal−oxygen−metal bonding state, which prevents implementation in cost-effective continuous manufacturing. Here, we report rapid formation of solution-processed oxide semiconductors by employing a dual-fuel-based solution combustion synthesis route. In particular, by optimizing the ratio of dual fuels of acetylacetone and 1,1,1trifluoro-acetylacetone (molar ratio of 7:3), high-performance indium−gallium−zinc oxide (IGZO) thin-film transistors (TFTs) could be fabricated at 350 °C with the annealing time as short as 5 min (In:Ga:Zn = 0.68:0.1:0.22). Based on spectroscopic analysis, it was found that the dual fuels enabled rapid formation of the metal−oxygen−metal lattice structure with low defective oxygen bonding states. The IGZO TFTs fabricated with an optimized fuel ratio exhibited average field-effect mobilities of 1.11 and 3.69 cm 2 V −1 s −1 with annealing times of 5 and 20 min, respectively (averaged in 9∼12 devices). Also, in the case of the 5 min annealed device, the threshold voltage was −0.48 ± 1.96 V, showing enhancement-mode operation. Furthermore, the device showed good stability against both positive gate bias stress and negative gate bias stress conditions with small threshold voltage shifts of −1.28 and − 1.28 V in 5760 s, respectively.

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

“…[ 54 ] The electrical properties of IGZO TFTs with various deposition methods and structures reported in the literature are summarized in Table 1. [ 18,51b–59 ] As far as we know, this is the first a‐IGZO TFT with SA coplanar structure using spray pyrolysis. The bottom gate and back channel etched IGZO TFTs by spray pyrolysis or spin coating have been reported.…”

Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

“…Several studies on the synthesis of cation doping in APbI 3 perovskites have been conducted, which include the solution process, coprecipitation, chemical vapour deposition, and solvothermal (ST) method. 18,19 Among them, ST is advantageous for controlling the morphology, crystal size, shape, and homogeneity. However, they require long duration and complex synthesis procedures.…”

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

“…5 Therefore, the complete performance of TFTs totally depends on both semiconductor and dielectric materials including electrodes, and recently, significant efforts have been made to develop novel materials for these new device applications. For this, numerous oxide semiconductors such as a-IGZO, 6–8 In 2 O 3 , 9–11 and a-IGTO 12–14 have been extensively investigated by solution deposition methods due to their low fabrication cost, high optical transparency, high mobility, electrical stability, and robust operation for reliable metal oxide TFTs. At the same time, the investigation of dielectric materials progressed very slowly even though they are one of the crucial components in TFTs.…”