Optimization of external poly base sheet resistance in 0.13μm quasi self-aligned SiGe:C HBTs

You, Shuzhen; Huylenbroeck, Stefaan Van; Nguyen, Ngoc Duy; Sibaja-Hernandez, A.; Venegas, Rafael; Wichelen, K. Van; Decoutere, Stefaan; Meyer, K. De

doi:10.1016/j.tsf.2009.10.058

Cited by 1 publication

(1 citation statement)

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“…This improvement of operation speed is driven by applications like fast communication systems or imaging systems working in the THz regime [2] and references therein. To reach such outstanding high-frequency performances it is essential to reduce the effect of parasitic resistances and capacitances, and especially the apparent base resistance (R B ) and the base-collector capacitance (C BC ) [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP/InGaAs HBTs

Ramírez‐García

Aniel

Enciso-Aguilar

et al. 2012

Semicond. Sci. Technol.

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We present an original and reliable technique to elucidate the different contributions to the apparent base resistance (R B = R Bx + XR Bi ) of double heterojunction bipolar transistors (HBTs) designed by Alcatel-Thales III-V Lab. The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high-frequency noise (HFN) measurements. This method was applied to three InP/InGaAs HBTs having different emitter surfaces (S E ). The correct determination of R Bx , X and R Bi may be a useful tool for compact and/or linear electrical modelling and may give some guidelines to designers to improve operation frequencies. Moreover, this strategy can be applied to any layout and technological variation of HBT; it can be also applied to homojunction bipolar transistors. Our results show that HFN analysis should be included to fully characterize bipolar transistors.

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