Optimization of InGaAs/InAlAs Avalanche Photodiodes

Chen, Jun; Zhang, Zhengyu; Zhu, Min; Xu, Jinping; Li, Xiangyang

doi:10.1186/s11671-016-1815-9

Cited by 17 publications

(9 citation statements)

References 18 publications

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“…Next, photocurrent–voltage characterizations were carried out by a continuous‐wave (CW) laser at 1310 nm, which allowed electron–hole pairs to be generated only in the GaSb absorbers. Clearly, the characteristics of photocurrent are different from those of InGaAs/InP or InGaAs/InAlAs SAM‐APDs . As shown in Figure a, we observe a two‐stage increase in photocurrent.…”

Section: Experiments Results and Discussionmentioning

confidence: 77%

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Juang

Chen

Ren

et al. 2019

Advanced Optical Materials

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and multiplication avalanche photodiodes (SAM-APDs) composed of photoabsorbers and large bandgap multiplication regions are advantageous for achieving highefficient and low-noise photodetection with high-energy resolution. [11][12][13] Such a detector architecture can be also applied to energy-sensitive gamma-ray and X-ray detection. A GaAs/AlGaAs SAM-APD comprised of a 4.5 µm absorption region and a staircase-like multiplication region has been developed for X-ray photodetection. [14] Meanwhile, a similar GaAs/ Al 0.8 Ga 0.2 As SAM-APD structure has been also demonstrated to detect soft X-rays at 5.9 keV with a full-width half-maximum (FWHM) of 1.08 keV. [15] However, its spectroscopic characterizations show an undesired secondary peak located at energy lower than the 5.9 keV peak. This is because of 1) different degrees of impact ionization experienced by the electrons and holes; [16][17][18] 2) insufficient layer thickness ratio; [19] and 3) inadequate difference of pair creation energy (PCE) between GaAs and AlGaAs. [20,21] Indeed, the absorption efficiency can be improved by simply increasing the thickness of the absorption layer. Unfortunately, the commonly used (Al)GaAs semiconductors are not able to concurrently offer high-Z (i.e., high atomic number) absorption and large PCE difference within SAM structures for highenergy X-ray or gamma-ray detection.Alternatively, the antimony-based (Sb-based) SAM-APD structure with high-Z GaSb and large bandgap AlAsSb is promising. GaSb absorbers can provide a much higher probability than GaAs to stop X-ray and gamma-ray photons at a given energy due to a relatively higher Z. [22] In addition, the GaSb/AlAsSb material system provides a larger dissimilarity in both PCE and absorption efficiency. [23,24] This allows for a significant suppression of spurious photopeaks, which are generated outside the intended absorption regions. The combination of these unique capabilities shows promise for achieving X-ray and gamma-ray detectors with high spectroscopic performance. To prove the concept, we develop GaSb/AlAsSb SAM-APDs composed of 2 µm GaSb absorbers and AlAsSb digital alloy multiplication regions to detect X-ray and gamma-ray photopeaks under irradiation from 241 Am sources. Due to the reduced high-peak electric Demonstrated are antimony-based (Sb-based) separate absorption and multiplication avalanche photodiodes (SAM-APDs) for X-ray and gamma-ray detection, which are composed of GaSb absorbers and large bandgap AlAsSb multiplication regions in order to enhance the probability of stopping highenergy photons while drastically suppressing the minority carrier diffusion. Well-defined X-ray and gamma-ray photopeaks are observed under exposure to 241 Am radioactive sources, demonstrating the desirable energy-sensitive detector performance. Spectroscopic characterizations show a significant improvement of measured energy resolution due to reduced high-peak electric field in the absorbers and suppressed nonradiative recombination on surfaces. Additionally, the GaSb/AlAsSb SAM...

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Section: Experiments Results and Discussionmentioning

confidence: 77%

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Juang

Chen

Ren

et al. 2019

Advanced Optical Materials

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“…For instance, the high electron-mobility transistors [1][2][3][4] and the spin field-effect transistors [5] are feasible electronic devices that could be demonstrated on InAlAs/InGaAs heterostructures. In addition, the infrared photodetectors [6][7][8][9], X-ray detectors [10], terahertz (THz) quantumcascade lasers [11,12], mid-infrared quantum-cascade lasers [13,14], and electro-optical modulators [15] are also typical examples that can open up a broad avenue toward the tangible optoelectronic applications of the InAlAs/InGaAs quantum well (QW) structures. When growing the epitaxial heterostructure, in general, both the alloy disorder and the layer-thickness fluctuation are inevitable because of the lattice mismatch in between the ultrathin heterojunction layers.…”

Section: Introductionmentioning

confidence: 99%

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

2021

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The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In0.52Al0.48As/In0.53Ga0.47As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the Fermi edge singularity (FES) peak in its photoluminescence spectrum at 10–300 K; and the FES peak was analyzed in terms of the phenomenological line shape model with key physical parameters such as the Fermi energy, the hole localization energy, and the band-to-band transition amplitude. Through the comprehensive studies on both the theoretical calculation and the experimental evaluation of the energy band profile, we found out that the localized state, which is separated above by ~0.07 eV from the first excited hole-subband, corresponds to the deep-level state, residing at the position of ~0.75 eV far below the conduction band (i.e., near the valence band edge).

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“…Considering the charge layer of InAlAs APDs, Kleinow et al studied the influence of doping concentration in this layer and found that doping concentration is more important for the performance of InGaAs/InAlAs APDs [25, 26]. Chen et al studied the influence of the charge and multiplication layers on punch-through and breakdown voltages by theoretical analysis and simulation [27]. These studies have focused on the performance of InAlAs APDs under the linear model.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

et al. 2019

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Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.

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Optimization of InGaAs/InAlAs Avalanche Photodiodes

Cited by 17 publications

References 18 publications

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

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