Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications

Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

“…14. Since the flatness of g m vs I ds curves increases with gate height, the linearity of the UnderlapFinFET devices improves drastically with the increase in the gate height [33]- [34].…”