Optimized NH&amp;lt;tex&amp;gt;$_3$&amp;lt;/tex&amp;gt;Annealing Process for High-Quality HfSiON Gate Oxide

Akbar, M.S.; Cho, H.-J.; Choi, Rino; Kang, Chang Seok; Kang, Chang Yong; Choi, Chang Hwan; Rhee, Se Jong; Kim, Y.H.; Lee, J.C.

doi:10.1109/led.2004.830270

Cited by 31 publications

(8 citation statements)

References 7 publications

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“…The V FB of samples after PDA generally have values larger than the ideal value, which suggests that PDA induced negative fixed charges in the films except for the film with the highest C Si . Considering that the nitrogen in the films usually shifts the V FB negatively, 22 the changes in the V FB by PDN ͑nitrogen incorporation͒ are well consistent with the C N of the films. A larger C N in the films shifts the V FB values further into the lower voltage direction.…”

Section: Resultssupporting

confidence: 64%

Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

Park

Kim

Jang

et al. 2008

Journal of Applied Physics

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Articles you may be interested inDependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition Effect of NH 3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO 2 Appl. Phys. Lett. 86, 032906 (2005); 10.1063/1.1854194Well-behaved metal-oxide-semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor-liquid hybrid deposition process This study examined the nitrogen incorporation behavior of atomic layer deposited HfO 2 and Hf-silicate films with various Si concentrations during thermal annealing under a NH 3 atmosphere. The level of crystallization and the phase distribution of the films ͑crystalline HfO 2 and amorphous Hf-silicate and SiO 2 ͒ had a significant effect on extent of nitrogen incorporation. There was virtually no nitrogen incorporation in the crystallized HfO 2 . Under the condition that the Hf-silicate films were not phase-separated and crystallized during thermal nitridation, the excess HfO 2 and SiO 2 phases that did not contribute to the amorphous HfSiO 4 phase were easily nitrided. On the other hand, the amorphous HfSiO 4 phase was barely nitrided. Therefore, it was concluded that the level of nitrogen concentration in the Hf-silicate films decreased with increasing Si concentration in the films. The changes in the capacitance equivalent thickness, gate leakage current density, and flatband voltage shift of the various films after thermal nitridation were consistent with the nitrogen concentration in the films.

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Section: Resultssupporting

confidence: 64%

Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

Park

Kim

Jang

et al. 2008

Journal of Applied Physics

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“…Irrespective of Hf composition, the -EOT data lies almost in the same line as shown. This is consistent with our previous report where J-EOT line lies almost in the same line irrespective of Si composition[12]. At the same EOT, the bi-layer structure (see 0741-3106/$20.00 © 2005 IEEEFig.…”

supporting

confidence: 92%

Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSi/sub x/O/sub y/ dielectric

Akbar

Choi

Rhee

et al. 2005

IEEE Electron Device Lett.

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The effect of a bi-layer structure by varying the Hf composition in Hf-silicate dielectric in improving the electrical performance and reliability of high-gate stack n-MOSFETs has been investigated. Introducing Hf-silicate with 19.5% of Hf composition at the bottom layer and 28.5% of Hf on the top of it reduces the leakage current dramatically, while it minimally sacrifices increase in equivalent oxide thickness. Moreover, the structure reduces defect generation rate under gate injection and improves breakdown voltage in comparison to the control samples. Increase in Si-O bonds at the bottom interface, decrease in Coulomb scattering, and increase in dielectric constant in the top layer have been attributed to the overall performance increase of the gate stack. Index Terms-Charge trap, equivalent oxide thickness (EOT), flat-band voltage, Hf-silicate, hysteresis, time zero dielectric breakdown (TZDB).

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“…8 Moreover, effective nitrogen incorporation in highk films could be achieved by annealing them in NH 3 at a relatively low temperature ($600 C). 9 Therefore, TaHfON can be considered as a promising high-k gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

Liu¹,

Choi²,

Lai³

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Gallium arsenide (semiconductor) (GaAs) metal-oxide-semiconductor capacitors with fluorine-incorporated TaHfON as gate dielectric are fabricated by pre-or postdeposition fluorine plasma treatment and their electrical and physical properties are compared with a control sample without the treatment. Among the three devices, the one with postdeposition fluorine treatment exhibits better characteristics: low oxide-charge density (À3.5 Â 10 12 cm À2), low interface-state density (2.2 Â 10 12 cm À2 eV À1), small flatband voltage (0.7 V), small hysteresis (45 mV), and good capacitance-voltage behavior. These should be attributed to (1) the passivating effects of fluorine atoms on the acceptorlike interface and near-interface traps, and (2) fluorine-induced suppressed growth of unstable Ga and As oxides on the GaAs substrate during postdeposition annealing.

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Optimized NH<tex>$_3$</tex>Annealing Process for High-Quality HfSiON Gate Oxide

Cited by 31 publications

References 7 publications

Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSi/sub x/O/sub y/ dielectric

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

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