Optimum design for a thermally stable multifinger power transistor with temperature-dependent thermal conductivity

Liao, Chih-Hao; Lee, Chien-Ping

doi:10.1109/16.998602

Cited by 8 publications

(1 citation statement)

References 17 publications

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“…Similar expression can be obtained for the -direction momentum. The three conservation equations are solved in conjunction with Maxwell's equations (8) (9) where is the electric field, is the magnetic field, is the electric flux density, and is the magnetic flux density. The fields in Maxwell's equations are updated using the current density estimated by (10) as follows: (10) The low field mobility is given by the empirical relation [40] cm V s (11) The above model accurately describes all the nonstationary transport effects by incorporating energy dependence into all the transport parameters such as effective mass and relaxation times, along with including EM-wave effects.…”

Section: Problem Descriptionmentioning

confidence: 99%

An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors

Hussein

El-Ghazaly

Goodnick

2003

IEEE Trans. Microwave Theory Techn.

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We present a fast wavelet-based time-domain modeling technique to study the effect of electromagnetic (EM)-wave propagation on the performance of high-power and high-frequency multifinger transistors. The proposed approach solves the active device model that combines the transport physics, and Maxwell's equations on nonuniform self-adaptive grids, obtained by applying wavelet transforms followed by hard thresholding. This allows forming fine and coarse grids in the locations where variable solutions change rapidly and slowly, respectively. A CPU time reduction of 75% is achieved compared to a uniform-grid case, while maintaining the same degree of accuracy. After validation, the potential of the developed technique is demonstrated by EM-physical modeling of multifinger transistors. Different numerical examples are presented, showing that accurate modeling of high-frequency devices should incorporate the effect of EM-wave propagation and electron-wave interactions within and around the device. Moreover, high-frequency advantages of multifinger transistors over single-finger transistors are underlined through numerical examples. To our knowledge, this is the first time in the literature a fully numerical EM-physics-based simulator for accurate modeling of high-frequency multifinger transistors is introduced and implemented.

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Section: Problem Descriptionmentioning

confidence: 99%

An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors

Hussein

El-Ghazaly

Goodnick

2003

IEEE Trans. Microwave Theory Techn.

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Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models

Huang¹,

Li²,

Lee³

2004

Microelectronic Engineering

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Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

Jin¹,

Yong-guang²,

Tan³

et al. 2011

J. Semicond.

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Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

show abstract

Optimum design for a thermally stable multifinger power transistor with temperature-dependent thermal conductivity

Cited by 8 publications

References 17 publications

An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors

An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors

Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models

Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

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