Optimum gate driver design to reach SiC-MOSFET's full potential — Speeding up to 200 kV/μs

Kreutzer, Otto; Eckardt, Bernd; März, Martin

doi:10.1109/wipda.2015.7369313

Cited by 23 publications

(26 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although gate drive is not packaged with power module in an integrated fashion, the basic function of the IPMs defined above can be achieved. More versions of SiC based power module integrated with gate drive have been investigated and demonstrated [77]- [80]. They are generally in developmental stages.…”

Section: Sic Intelligent Power Modulementioning

confidence: 99%

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

165

View full text Add to dashboard Cite

show abstract

Section: Sic Intelligent Power Modulementioning

confidence: 99%

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

165

View full text Add to dashboard Cite

show abstract

“…There is a small operation margin of the gate-source voltage of the GaN eHEMT, as its recommended drive voltage is 6V and the maximum limit is 7V. Thus, the turn-ON gate resistance is chosen such that gate-source voltage oscillations are kept low, yet without slowing down the switching speed [21]. The gatesource loop schematic shown in Fig.…”

Section: A Gate Drivermentioning

confidence: 99%

“…A state-of-the-art power loop inductance of 1.5 nH including current measurement is reported [20]. The solution is to mold the PCB directly on top of the DBC, in which no bond wires are used [21]- [23]. The structure is shown in Fig.…”

mentioning

confidence: 99%

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Jørgensen

Bęczkowski

Uhrenfeldt

et al. 2019

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancementmode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.

show abstract

“…Another method is to connect a Zener diode in a parallel fashion with the gate and source. The circuit design is simple, while the disadvantage is a time delay of the gate voltage detection and a lack of reliability [34].…”

Section: Clamping the Gate-source Voltagementioning

confidence: 99%

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Qin

Xun

et al. 2019

Electronics

View full text Add to dashboard Cite

Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

show abstract

Optimum gate driver design to reach SiC-MOSFET's full potential — Speeding up to 200 kV/μs

Cited by 23 publications

References 1 publication

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Contact Info

Product

Resources

About