Or0504–Investigations on the Effect of Dielectric Barrier Discharge (DBD) Treatment as a Preconditioning Method for Low Temperature Silicon Wafer Bonding

Abstract

The individual effects of an atmospheric‐pressure dielectric barrier discharge (DBD) treatment in oxygen on the low temperature bonding behavior of native oxide covered silicon wafers are evaluated. The role of oxide porosity as well as the hindering influence of embedded water molecules are particularly emphasized. The need for maximization of surface silanol density is relativized. Reasons are given, why highly reactive groups and catalytic agents are not expected to have severe influence on the improvement of bond strengthening.

(Invited) Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding in Microsystems Technology

“…Studies on silicon wafers with oxygen plasma activation at atmospheric-pressure have shown that by the plasma treatment a porous oxide is formed, playing an important role for the rapid achievement of high bond strengths because the removal of water generated in the reaction scheme shown above will be facilitated (8). Furthermore, the influence of nitrogen-containing process gases on the bond strength and the formation of cationic bridges by NH 4 + were discussed (2).…”