Order-Disorder Component in the Phase Transition Mechanism of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mmultiscripts><mml:mi mathvariant="normal">O</mml:mi><mml:mprescripts /><mml:none /><mml:mn>18</mml:mn></mml:mmultiscripts></mml:math>Enriched Strontium Titanate

Blinc, R.; Zalar, Boštjan; Laguta, V. V.; Itoh, Makoto

doi:10.1103/physrevlett.94.147601

Cited by 93 publications

(52 citation statements)

References 21 publications

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“…Dead layers have been discussed in the context of ferroelectrics, where they are often proposed as explanations for the worsening of the dielectric constant of thin films, although the exact nature, thickness, and even location of the dead layer, which might be inside the electrode, is still a subject of debate (Sinnamon, Bowman, and Gregg, 2001;Stengel and Spaldin, 2006;Chang et al, 2009). In ferroelectrics, dead layers prevent screening causing domains to appear (Bjorkstam and Oettel, 1967;Kopal et al, 1999;Bratkovsky and Levanyuk, 2000). More recently, Luk'yanchuk et al (2009) proposed that an analogous phenomenon may take place in ferroelastics, so that ''ferroelastic dead layers'' can cause the formation of twins (Fig.…”

Section: Domains a Boundary Conditions And The Formation Of Domainsmentioning

confidence: 99%

“…However, polar nanodomains have been detected even in the normal 16 O composition of SrTiO 3 (Uesu et al, 2004;Blinc et al, 2005), and their local symmetry is triclinic and not tetragonal (Blinc et al, 2005). The ferroelectric phase of the heavyisotope composition is also poorly understood, but it has finely structured nanodomains reminiscent of those observed in relaxors (Uesu et al, 2004;Shigenari et al, 2006), while relaxorlike behavior has also been observed in SrTiO 3 thin films (Jang et al, 2010).…”

Section: G Nanodomains In Bulkmentioning

confidence: 99%

“…The earliest electron microscopy measurements were reported by Blank and Amelinckx (1963), and they placed an upper bound of 10 nm on the 90 wall thickness of barium titanate. Bursill and co-workers Bursill, Peng, andFeng, 1983, Bursill andLin, 1986) used high-resolution electron microscopy to confirm that the domain walls of LiTaO 3 and KNbO 3 are indeed thin and atomically sharp in the case of 180 walls.…”

Section: B Domain Wall Thickness and Domain Wall Profilementioning

confidence: 99%

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Domain wall nanoelectronics

et al. 2012

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Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

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Section: Domains a Boundary Conditions And The Formation Of Domainsmentioning

confidence: 99%

Section: G Nanodomains In Bulkmentioning

confidence: 99%

Section: B Domain Wall Thickness and Domain Wall Profilementioning

confidence: 99%

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Domain wall nanoelectronics

et al. 2012

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“…1,2 STO is also a perfect prototype to investigate phase transition, 3 especially to understand the surface and interface structural configuration for the perovskite films grown on it. 4 Although ferroelectric properties were only reported through oxygen isotope exchange ͑ST 18 O͒, 3,5 and cation substitution, 6,7 recent theories and experiments validate the existence of ferroeletricity in STO thin films under strain. [8][9][10] He et al [11][12][13] systematically studied the structural phase transition of STO thin films under strain.…”

mentioning

confidence: 99%

“…SrTiO 3 ͑STO͒ is an incipient ferroelectric material in perovskite structure, which has been extensively studied for its application in tunable microwave devices for having a large and variable dielectric constant. 1,2 STO is also a perfect prototype to investigate phase transition, 3 especially to understand the surface and interface structural configuration for the perovskite films grown on it.…”

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confidence: 99%

Strain distribution in epitaxial SrTiO3 thin films

Zhai

Jiang

et al. 2006

Applied Physics Letters

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The lattice strain distributions of epitaxial SrTiO 3 films deposited on LaAlO 3 were investigated by in situ x-ray diffraction at the temperature range of 25-300 K, grazing incident x-ray diffraction, and high resolution x-ray diffraction. The nearly linear temperature dependence of the out-of-plane lattice constant of SrTiO 3 was observed in the measured temperature range. The depth distribution of the lattice strain at room temperature for SrTiO 3 films includes the surface layer, strained layer, and interface layer. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2424282͔ SrTiO 3 ͑STO͒ is an incipient ferroelectric material in perovskite structure, which has been extensively studied for its application in tunable microwave devices for having a large and variable dielectric constant. 1,2 STO is also a perfect prototype to investigate phase transition, 3 especially to understand the surface and interface structural configuration for the perovskite films grown on it. 4 Although ferroelectric properties were only reported through oxygen isotope exchange ͑ST 18 O͒, 3,5 and cation substitution, 6,7 recent theories and experiments validate the existence of ferroeletricity in STO thin films under strain. [8][9][10] He et al. [11][12][13] systematically studied the structural phase transition of STO thin films under strain. Devonshire 14 predicted the shift of the ferroelectric phase transition temperature ͑T c ͒ for STO thin films due to the biaxial strain. Haeni et al. 10 reported that the room temperature ferroelectricity appears for the tensile strained STO thin films on DyScO 3 substrates, although STO crystal is incipient ferroelectric. There is little work on the observation of distribution of lattice strain along the normal of sample surface for STO thin films.In this letter, the distribution of the lattice strain of the epitaxial STO films grown on LaAlO 3 ͑LAO͒ ͑001͒ substrate by laser molecular beam epitaxy ͑MBE͒ deposition ͑L-MBE͒ is investigated. The temperature dependence of the c-direction lattice constant ͑c-T curve͒ is nearly linear, which is different from that of the bulk. The depth dependence of the lattice strain is not homogeneous, which may be due to the competition between the elastic restore and the lattice mismatch between STO film and LAO substrate.STO films were grown on LAO ͑001͒ single crystal substrate in a L-MBE system. The technique was used to deposit STO on Si in our previous studies. 15,16 Briefly, a single crystal STO target was used to grow STO film. A KrF excimer laser was used in a repetition rate of 2 Hz. The substrate was heated to 770°C. The film thicknesses were 80, 150, and 280 nm from the measurement of a Dektax 3 ST surface profile. X-ray diffraction ͑XRD͒ ͑Cu K␣ radiation͒ analysis was performed using the /2 scan mode on a Rigaku Dmax-rB and a Bruker Advanced D8 X-ray diffractometer. The depth dependence of strain, which is related to the film thickness, was determined by grazing incident x-ray diffraction ͑surface x-ray diffraction͒, which was carried out on Be...

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Progress on Emerging Ferroelectric Materials for Energy Harvesting, Storage and Conversion

Wei

Domingo

Sun

et al. 2022

Advanced Energy Materials

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Since the discovery of Rochelle salt a century ago, ferroelectric materials have been investigated extensively due to their robust responses to electric, mechanical, thermal, magnetic, and optical fields. These features give rise to a series of ferroelectric‐based modern device applications such as piezoelectric transducers, memories, infrared detectors, nonlinear optical devices, etc. On the way to broaden the material systems, for example, from three to two dimensions, new phenomena of topological polarity, improper ferroelectricity, magnetoelectric effects, and domain wall nanoelectronics bear the hope for next‐generation electronic devices. In the meantime, ferroelectric research has been aggressively extended to more diverse applications such as solar cells, water splitting, and CO2 reduction. In this review, the most recent research progress on newly emerging ferroelectric states and phenomena in insulators, ionic conductors, and metals are summarized, which have been used for energy storage, energy harvesting, and electrochemical energy conversion. Along with the intricate coupling between polarization, coordination, defect, and spin state, the exploration of transient ferroelectric behavior, ionic migration, polarization switching dynamics, and topological ferroelectricity, sets up the physical foundation ferroelectric energy research. Accordingly, the progress in understanding of ferroelectric physics is expected to provide insightful guidance on the design of advanced energy materials.

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Order-Disorder Component in the Phase Transition Mechanism ofO18Enriched Strontium Titanate

Cited by 93 publications

References 21 publications

Domain wall nanoelectronics

Domain wall nanoelectronics

Strain distribution in epitaxial SrTiO3 thin films

Progress on Emerging Ferroelectric Materials for Energy Harvesting, Storage and Conversion

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