Ordered GeSi nanorings grown on patterned Si (001) substrates

Ma, Yingjie; Cui, Jian; Fan, Yunfei; Zhong, Zhenyang

doi:10.1186/1556-276x-6-205

Cited by 10 publications

(8 citation statements)

References 25 publications

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“…Nearly all the QDs located around nanopits. However, by growing buffer layers with increasing growth temperature from 500°C to 640°C on nanopit-patterned substrates, QDs nucleate in the nanopits by growing at 640°C [ 11 ]. It can be deduced that different pre-deposited surface morphologies in the two cases result in different nucleation modes.…”

Section: Resultsmentioning

confidence: 99%

“…Nanopits are interesting for their use as template to achieve positioning growth of QDs, [8-10] QRs [11] and QD molecules [12]. In 1998, Deng and Krishnamurthy [12] fabricated nanopits by depositing carbon impurity in Si matrix, in which SiGe QD molecules were grown around each nanopit.…”

Section: Introductionmentioning

confidence: 99%

“…In 1998, Deng and Krishnamurthy [12] fabricated nanopits by depositing carbon impurity in Si matrix, in which SiGe QD molecules were grown around each nanopit. In recent years, nanopits fabricated by electron beam lithography, [8,13] holography lithography [9] and nanosphere lithography [10,11] have been used to fabricated ordered SiGe QDs or QRs. Recently, nanopits were also observed in III–V material system by self-assembling based on droplet epitaxy growth [14].…”

Section: Introductionmentioning

confidence: 99%

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Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Cui

Lin

et al. 2010

Nanoscale Res Lett

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In-situ annealing at a high temperature of 640°C was performed for a low temperature grown Si capping layer, which was grown at 300°C on SiGe self-assembled quantum dots with a thickness of 50 nm. Square nanopits, with a depth of about 8 nm and boundaries along 〈110〉, are formed in the Si capping layer after annealing. Cross-sectional transmission electron microscopy observation shows that each nanopit is located right over one dot with one to one correspondence. The detailed migration of Si atoms for the nanopit formation is revealed by in-situ annealing at a low temperature of 540°C. The final well-defined profiles of the nanopits indicate that both strain energy and surface energy play roles during the nanopit formation, and the nanopits are stable at 640°C. A subsequent growth of Ge on the nanopit-patterned surface results in the formation of SiGe quantum dot molecules around the nanopits.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Cui

Lin

et al. 2010

Nanoscale Res Lett

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“…seed induced self-assembly [14] , pattern template substrate assisted self-assembly [15] , specific crystallographic plane [16] and post-growth techniques [17] . Ordered Ge QDs [18] , NRs [19] and NWs [20] have been realized. Benefiting from the progress made in controllable growth, other advanced nanostructure systems can also be realized, e.g.…”

Section: Introductionmentioning

confidence: 99%

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Zhou

Zhong

2018

J. Semicond.

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We present an overview on the recent progress achieved on the controllable growth of diverse GeSi alloy nanostructures by molecular beam epitaxy. Prevailing theories for controlled growth of Ge nanostructures on patterned as well as inclined Si surfaces are outlined firstly, followed by reviews on the preferential growth of Ge nanoislands on patterned Si substrates, Ge nanowires and high density nanoislands grown on inclined Si surfaces, and the readily tunable Ge nanostructures on Si nanopillars. Ge nanostructures with controlled geometries, spatial distributions and densities, including two-dimensional ordered nanoislands, three-dimensional ordered quantum dot crystals, ordered nanorings, coupled quantum dot molecules, ordered nanowires and nanopillar alloys, are discussed in detail. A single Ge quantum dot-photonic crystal microcavity coupled optical emission device demonstration fabricated by using the preferentially grown Ge nanoisland technique is also introduced. Finally, we summarize the current technology status with a look at the future development trends and application challenges for controllable growth of Ge nanostructures.

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“…However, the cost and complexity of these techniques increase dramatically with the demand for reduced feature sizes over large areas. Nanosphere lithography (NSL) has emerged as an alternative nanofabrication technique, where a monodisperse or multidisperse nanosphere template acts as an etching or deposition mask to transfer its pattern to the underlying substrate [10-12]. The sizes of nanospheres can be tuned from 20 to 1,000 nm [13,14], offering a simple and inexpensive solution to scale nanostructure feature sizes.…”

Section: Introductionmentioning

confidence: 99%

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Chang

Cheng

et al. 2013

Nanoscale Res Lett

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This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.

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Ordered GeSi nanorings grown on patterned Si (001) substrates

Cited by 10 publications

References 25 publications

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

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