Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- $k$ Gate Dielectric Material

“…Among the various solution-processed organic semiconductors that are currently in use, poly(3-hexylthiophene) (P3HT) has been the most extensively studied p-type material [15], [16] so far. These OFETs can be passivated with novel passivation approaches for comparatively stable performance [17]. Up to now, most of the studies on OFETs are done on a common [18], [19].…”

Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation

“…Thus, the OFF-current sensitivity observed was 0.57 pA/Gy/1-μm width of the OFET. A thin (∼15 nm) layer of silicon nitride was deposited as a passivation layer using the HWCVD process, which acts as a good barrier to oxygen and moisture in the ambient and improves the atmospheric stability of the sensors [10]. Organic radiation sensors will have all the advantages of organic electronics such as large area coverage, structural flexibility, and simpler processing, resulting in a low production cost.…”

“…During the HWCVD deposition process [10], the substrate holder was kept at room temperature to avoid the effect of high temperature to the organic semiconductor layer. In an earlier study, we have shown the low-temperature HWCVD nitride to be quite effective as a passivation layer for organic devices, resulting in a 400% improvement in the atmospheric stability of the organic materials [10].…”

Effect of DC bias on microstructural rearrangement of a-SiN:H films on PET substrate

“…These issues become critical for use in the organic (OLED) display technology [3,4] and these backgrounds have motivated the present research. There have been many reports on the deposition of a-SiN:H films on the PET substrate by hot-wire chemical vapor deposition (HWCVD) with a gas mixture of silane (SiH 4 ) and ammonia (NH 3 ) [3,6]. Wuu et al observed that the NH 3 /SiH 4 flow ratio played an important role in a-SiN:H films such as bonding configuration, transmittance, refractive index, deposition rate, adhesion, WVTR and OTR on the polyethylene terephthalate (PET) [4,6].…”