Organic insulating films of nanometer thicknesses

Vuillaume, D.; Boulas, C.; Collet, J.; Davidovits, J. V.; Rondelez, F.

doi:10.1063/1.117444

Cited by 115 publications

(105 citation statements)

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“…Since the pentacene films are assumed to be thinner than the screening length near flat band condition [40], we expect that the turn-on voltage is very close to the flat band voltage. The maximum carrier concentration corresponds to about one induced mobile hole per 100 SAM molecules, assuming a surface density of the SAM molecules of 4 × 10 14 /cm 2 [41].…”

Section: B Effect Of the Sam's Dipole Fieldmentioning

confidence: 99%

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Pernstich

Rashid

Haas

et al. 2004

Journal of Applied Physics

531

492

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We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4 × 10 12 /cm 2 . In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1 × 10 12 /cm 2 .

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Section: B Effect Of the Sam's Dipole Fieldmentioning

confidence: 99%

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Pernstich

Rashid

Haas

et al. 2004

Journal of Applied Physics

531

492

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“…[8][9][10] Later on, SAM dielectric films were indeed successfully employed for the fabrication of OTFT's by us [12] as well as by other groups. [13] In the present work, we demonstrate that these excellent tunnel dielectric behaviors are still valid down to 3 carbon atoms.…”

mentioning

confidence: 99%

A Tunnel Current in Self‐Assembled Monolayers of 3‐Mercaptopropyltrimethoxysilane

Aswal

Lenfant

Guérin

et al. 2005

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“…[4][5][6][7][8] Systematic study on the electric properties of the organic monolayers on the semiconductor substrate should also extend our understanding of surface electrochemistry, semiconductor electrochemistry, and electron transfer through organic/inorganic heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

Electron Transfer through Organic Monolayers Directly Bonded to Silicon Probed by Current Sensing Atomic Force Microscopy: Effect of Chain Length and Applied Force

Zhao

Uosaki

2004

J. Phys. Chem. B

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Electron transfer through organic monolayers directly bonded to a silicon surface has been investigated by using a current sensing atomic force microscope (CSAFM). The research system employs a platinum-coated CSAFM tip in point contact at a confined nanometer size with a set of alkyl monolayers of various chain lengths, which are covalently bonded directly to an n-type Si(111) by immersing a H-terminated silicon substrate in neat CH 2 dCH-(CH 2 ) n-3 CH 3 (n ) 12, 14, 16, and 18) under heating. The current flows were analyzed with a modified electron-tunneling model and showed strong force and chain length dependences. Increasing the applied force resulted in a negative shift of the current-voltage (I-V) curves. This observation was mainly explained by the amplified contact area and shortened tunneling distance. In addition, the I-V curves showed chain length dependence, from which the bias-dependent electron tunneling coefficient, , was analyzed.

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Organic insulating films of nanometer thicknesses

Cited by 115 publications

References 0 publications

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

A Tunnel Current in Self‐Assembled Monolayers of 3‐Mercaptopropyltrimethoxysilane

Electron Transfer through Organic Monolayers Directly Bonded to Silicon Probed by Current Sensing Atomic Force Microscopy: Effect of Chain Length and Applied Force

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