Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel

Tardy, J.; Erouel, Mohsen; Deman, Anne-Laure; Gagnaire, A.; Teodorescu, V. S.; Blanchin, M. G.; Canut, B.; Barau, A.; Zaharescu, M.

doi:10.1016/j.microrel.2006.01.012

Cited by 75 publications

(46 citation statements)

References 18 publications

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“…Therefore, tremendous effort has been devoted to the engineered of gate dielectrics, in order to lower the control voltage for field effect transistors [6~10]. The solutions include but are not limited to high-κ inorganic materials [6,7], self-assembled molecular monolayer [8], and ion-gel gate [9,10]. Particularly, the devices with ion-gel gate dielectric have an excellent turn-on conductance at low operating voltage (< 2 V), but suffer from extremely slow switching speed (approximately in seconds) [10], which is Manuscript received April 21, 2011 comparable with electrochemical transistors [11,12].…”

Section: Introductionmentioning

confidence: 99%

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Herlogsson

Kergoat

et al. 2011

IEEE Trans. Electron Devices

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Abstract-We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed from voltage-dependent electric double layer capacitance. The voltage dependent contact effect and short channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.Index Terms-static model, electric double layer capacitance, field effect transistors, parameter extraction, polymer electrolyte

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Section: Introductionmentioning

confidence: 99%

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Herlogsson

Kergoat

et al. 2011

IEEE Trans. Electron Devices

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“…[4][5][6] It is also noted that the high-K dielectric application in AlGaN/GaN HEMTs have also been actively studied, like the high-K application in the field of thin film transistors. 7,8 However, the reliability of AlGaN/GaN HEMTs is still of a great concern. 9 Some researchers have associated the major degradation mechanisms in AlGaN/GaN HEMTs such as the current collapse, 10 threshold voltage shift, 11 and the increase of the gate/drain leakage current 12 with the deep level traps in the device.…”

Section: Introductionmentioning

confidence: 99%

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

et al. 2016

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In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectric layer or at the SiNX/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (Vth) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiNX gate dielectric layer or at the SiNX/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on ΔC measurement.

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“…However, inorganic dielectric materials require a high-temperature/high-cost vacuum process for their preparation [24,25]. On the other hand, organic dielectric materials, such as polymers, can readily be processed from solution at a relatively low temperature over a large area, while their insulating properties are inferior to those of inorganic counterparts [26][27][28].…”

Section: Introductionmentioning

confidence: 99%

A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

Kim

2018

Coatings

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A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2-4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2-4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 • C) and exhibit good insulating properties (leakage current density of ≈10 −8 -10 −7 A·cm −2 at 1 MV·cm −1 ). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p-and n-channel organic semiconductors with mobility as high as 0.15 cm 2 ·V −1 ·s −1 and an I on /I off of >10 5 . Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates.

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Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel

Cited by 75 publications

References 18 publications

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

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