2022
DOI: 10.1016/j.jorganchem.2021.122183
|View full text |Cite
|
Sign up to set email alerts
|

Organosilicon compounds as single-source precursors for SiCN films production

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
10
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 14 publications
(18 citation statements)
references
References 225 publications
0
10
0
Order By: Relevance
“…The introduction of N 2 into the gas mixture leads to an increase in the nitrogen content of the SiC x N y films of up to 40 at.% [ 9 ]. A similar effect of the addition of nitrogen-containing gas on the composition of SiC x N y films is also shown for CVD films [ 1 ]. As follows from the literature, most of the films were obtained at room temperature (RT).…”
Section: Introductionmentioning
confidence: 53%
See 4 more Smart Citations
“…The introduction of N 2 into the gas mixture leads to an increase in the nitrogen content of the SiC x N y films of up to 40 at.% [ 9 ]. A similar effect of the addition of nitrogen-containing gas on the composition of SiC x N y films is also shown for CVD films [ 1 ]. As follows from the literature, most of the films were obtained at room temperature (RT).…”
Section: Introductionmentioning
confidence: 53%
“…The addition of even an insignificant amount of nitrogen to the gas phase (F(N 2 ) = 2 sccm) leads to a shift of the baseband to the region of large wave numbers and to its broadening, which corresponds to the appearance of bonds between silicon and nitrogen. The observed wide absorption band in the range of 700–1200 cm −1 is the typical one for Si–C–N films [ 1 ]. It can be interpreted as the superposition of bonds such as Si–C, Si–N, C–N, and Si–O.…”
Section: Resultsmentioning
confidence: 99%
See 3 more Smart Citations