2007
DOI: 10.1016/j.jlumin.2006.01.076
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Oriented growth and luminescence of ZnO:Eu films prepared by sol–gel process

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Cited by 58 publications
(37 citation statements)
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“…[10][11][12][13][14] The sol-gel process has also been employed in the preparation of luminescent rare earth-based materials incorporated into inorganic hosts in very mild conditions. 15 The non-alkoxide sol-gel method has the advantage of employing stable and less expensive precursors; alkoxides are very reactive and need special care during manipulation and storage (especially aluminum alkoxides). So far, there has been no study devoted to the preparation of rare earthdoped ZnAl 2 O 4 using a non-alkoxide sol-gel process.…”
Section: Introductionmentioning
confidence: 99%
“…[10][11][12][13][14] The sol-gel process has also been employed in the preparation of luminescent rare earth-based materials incorporated into inorganic hosts in very mild conditions. 15 The non-alkoxide sol-gel method has the advantage of employing stable and less expensive precursors; alkoxides are very reactive and need special care during manipulation and storage (especially aluminum alkoxides). So far, there has been no study devoted to the preparation of rare earthdoped ZnAl 2 O 4 using a non-alkoxide sol-gel process.…”
Section: Introductionmentioning
confidence: 99%
“…Owing to these properties, ZnO has attracted increasing attention as a promising candidate material for potential applications in optoelectronic devices [4][5][6][7][8][9]. The emission properties of undoped and doped ZnO films have been widely studied [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…The emission properties of the un-doped and doped ZnO films have been widely studied, including UV emissions originating from free and bound excitons and visible emission related to intrinsic or impurity defects [6][7][8][9][10]. The optoelectronic properties of In-doped ZnO films have been investigated because of the application in electrodes of solar energy systems and liquid crystal or plasma displays devices [11][12][13][14]; however, there are very few reports on the emission properties of In-doped ZnO films [15].…”
Section: Introductionmentioning
confidence: 99%