Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties

Pan, Zhengwei; Lai, H. L.; Au, Frederick C. K.; DUAN, X; Zhou, Weiya; Shi, Wensheng; Wang, Ning; Lee, Chun‐Sing; Wong, Ning-Biu; Lee, Shuit‐Tong; Xie, Songhai

doi:10.1002/1521-4095(200008)12:16<1186::aid-adma1186>3.0.co;2-f

Cited by 463 publications

(120 citation statements)

References 6 publications

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“…[1,2] The synthesis of SiCbased nanowires (NWs) and coaxial nanocables (NCs) has attracted much attention recently for potential applications in nano-reinforced composite materials, [3] nanoelectronic devices, [4] catalyst supports, [5] and nano-electromechanical systems. [6] A wide range of techniques have been developed for the synthesis of SiC-based 1D NCs that are based mainly on vapor-solid (VS) or vapor-liquid-solid (VLS) growth mechanisms.…”

Section: Introductionmentioning

confidence: 94%

“…Park et al reported a largescale synthesis of aligned SiC@C NCs in 2003; these materials were prepared by decomposing methane onto the surface of in situ grown SiC NWs. [14] The thickness of the carbon coating was controllable in the range 3-50 nm by varying the deposition time of CH 4 . The formation of a BN coating around SiC NWs has been more extensively studied.…”

Section: Introductionmentioning

confidence: 99%

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Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Bechelany

Brioude

Stadelmann

et al. 2007

Adv Funct Materials

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We present a simple process for the fabrication of very long SiC‐based coaxial nanocables (NCs). The versatility of this technique is confirmed by the ability to change the chemical composition of the NC outer layers from silica to carbon and boron nitride. The NCs consist of a SiC core approximately 30 nm in diameter with lengths up to several hundred of nanometers. The thickness of the coating is in the range 2–10 nm. The morphology and structural characterization of the NCs is investigated by scanning electron microscopy (SEM) and high‐resolution transmission electron microscopy (HRTEM), respectively, and their chemical composition is probed by electron energy loss spectroscopy (EELS). A vapor–solid growth mechanism is proposed to explain the growth of SiC‐based NCs of various chemical compositions, depending on the chemical nature of the vapor phase. Because of the large quantity of very long and interlaced NCs produced during the synthesis, the macroscopic aspect of the as‐grown material is like a self‐supported felt.

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Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Bechelany

Brioude

Stadelmann

et al. 2007

Adv Funct Materials

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“…E to can be further reduced to 0.7-2.9 V μm − 1 by using aligned SiC nanowires as emitters. 20,21 However, there have been few studies focusing on flexible SiC field emitters. [22][23][24] Furthermore, there have been no investigations of the effect of doping on the crystal growth behavior of SiC one-dimensional (1D) nanostructures or their FE properties.…”

Section: Introductionmentioning

confidence: 99%

Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm − 1 , 1.55 V μm − 1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. NPG Asia Materials (2015) 7, e157; doi:10.1038/am.2014.126; published online 23 January 2015 INTRODUCTIONFlexible electronic devices have attracted extensive attention in recent decades because of their numerous promising applications, such as flexible energy-storage devices, wearable energy-harvesting systems and stretchable electronics. 1-4 Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates. These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.Silicon carbide (SiC) is an excellent material candidate for constructing advanced FE emitters. SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters

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“…SiC nanowires have been shown to have stable field electron emission properties [54,55], suggesting that the materials have potential as field electron emitters. The heterostructures of single-walled carbon nanotubes and silicon carbide nanorods [56] may play an important role in future hybrid nanodevices.…”

Section: Charisma Of Different Varieties Of Sic Nanostructuresmentioning

confidence: 99%

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

Sahu

Ghosh

Pradhan

et al. 2012

International Journal of Electrochemistry

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Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several highperformance electronic and optical devices. SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices. In this paper, diverse role of SiC in its nanostructured form has been discussed. It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.

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Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties

Cited by 463 publications

References 6 publications

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Highly flexible and robust N-doped SiC nanoneedle field emitters

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

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