Origin and Optimization of RF Power Handling Limitations in Inline Phase-Change Switches

RF Power-Handling Performance for Direct Actuation of Germanium Telluride Switches

“…In fact, the switch failure is explained as a parasitic crystallization that occurs when the equivalent voltage at the GeTe edges should equal the threshold voltage, given by ℎ = ℎ . , as studied in [18]. This maximum voltage is thus proportional to the material length.…”

“…Within direct heating, a different physical phenomenon occurs during PCM crystallization. The principle is based on the possibility to create a conductive filament through direct actuation, which for a given geometry is only depending on the level of the voltage applied via the RF IN and OUT ports, named as threshold voltage, , as in [18]. It is somewhat a misnomer in the literature that is given in V/µm as any disruptive electric field.…”

“…Threshold voltage is considered as an intrinsic limitation. Its impact has been discussed in [12] and [18] where a pondering between threshold voltage and breakdown RF power was proposed when dealing with RF power handling. A deep insight analysis concerning this phenomenon is proposed here with the introduction of analytical equations that could help for design by considering not only the FoM given by the cut-off frequency but also power handling.…”

“…This maximum voltage is thus proportional to the material length. A value of 12.6 V/µm has been obtained for ℎ in [18]. By using the model of Fig.…”

“…As previously, it is interesting now to compare power handling between the two configurations: shunt and series. For similar GeTe dimensions, leading to = = ℎ , and identical values of the voltage across the switch, as voltage is the limiting factor for amorphous GeTe [18]), it is possible to derive the followings relationships: (18) During amorphous state, it is assumed that:…”