Origin of 1/ f noise in graphene produced for large‐scale applications in electronics

Abstract

The authors report a detailed investigation of the flicker noise (1/f noise) in graphene films obtained from chemical vapour deposition (CVD) and chemical reduction of graphene oxide. The authors find that in the case of polycrystalline graphene films grown by CVD, the grain boundaries and other structural defects are the dominant source of noise by acting as charged trap centres resulting in huge increase in noise as compared with that of exfoliated graphene. A study of the kinetics of defects in hydrazine-reduced graphene oxide (RGO) films as a function of the extent of reduction showed that for longer hydrazine treatment time strong localised crystal defects are introduced in RGO, whereas the RGO with shorter hydrazine treatment showed the presence of large number of mobile defects leading to higher noise amplitude.

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

“…Nevertheless, they are fair when considering the strongly disordered nature of inkjet-printed graphene films. The values of α H we have obtained are comparable to the values reported for monolayer epitaxial graphene on SiC 75 and hydrazine-reduced graphene oxide, 76 while are one order of magnitude larger than those reported for single-layer CVDgrown graphene. 55 The obtained values of α H are also comparable to those extracted from ref.…”

Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene

“…At 300 K, the noise in both types of devices shows a weak dip at the Dirac point for the SG and GB regions. Such a nonmonotonic noise behavior as a function of gate voltage has also been observed previously in exfoliated single layer graphene FETs ,,, and has been attributed to the inhomogeneous spatial charge distribution arising from the formation of electron–hole puddles at low densities in the presence of charged traps in the substrate and adsorbed functional groups on graphene. − ,− ,− …”

“…The low frequency 1/ f noise studies on exfoliated graphene devices have shown that the microscopic origin of the conductivity fluctuations can be traced to the correlated number–mobility fluctuations arising from the dynamic charge carrier exchange between the graphene channel and the traps in the oxide substrate/adsorbed functional groups. The magnitude of these fluctuations depends on the electrostatic screening of the charged traps which is intrinsically related to the bandstructure and layer number in graphene. − Given that GBs are not only additional scattering centers, but also modify local band structure, the nature and magnitude of noise at the graphene GBs can be drastically different from noise in graphene transistors built on crystalline exfoliated flakes.…”

Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses

“…This type of dependence is typical in graphene. The dependence indicates that the noise is determined not by uniformly distributed single defects in the material but by a system of defects [ 24 , 25 ]. A higher noise indicates a greater level of defectiveness in the material [ 26 ].…”