Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash

Nam, Kihoon; Park, Chanyang; Yoon, Jun-Sik; Jang, Hyundong; Park, Min Sang; Sim, Jaesung; Baek, Rock‐Hyun

doi:10.1016/j.sse.2020.107930

Cited by 18 publications

(11 citation statements)

References 16 publications

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“…Furthermore, ERS (PGM) state is the condition when holes (electrons) are filled in the CTN. The simulation structure was derived from the manufactured device [ 27 ].…”

Section: Simulation and Machine-learning Methodsmentioning

confidence: 99%

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Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method

et al. 2022

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A machine-learning (ML) technique was used to optimize the energetic-trap distributions of nano-scaled charge trap nitride (CTN) in 3D NAND Flash to widen the threshold voltage (Vth) window, which is crucial for NAND operation. The energetic-trap distribution is a critical material property of the CTN that affects the Vth window between the erase and program Vth. An artificial neural network (ANN) was used to model the relationship between the energetic-trap distributions as an input parameter and the Vth window as an output parameter. A well-trained ANN was used with the gradient-descent method to determine the specific inputs that maximize the outputs. The trap densities (NTD and NTA) and their standard deviations (σTD and σTA) were found to most strongly impact the Vth window. As they increased, the Vth window increased because of the availability of a larger number of trap sites. Finally, when the ML-optimized energetic-trap distributions were simulated, the Vth window increased by 49% compared with the experimental value under the same bias condition. Therefore, the developed ML technique can be applied to optimize cell transistor processes by determining the material properties of the CTN in 3D NAND Flash.

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“…Furthermore, ERS (PGM) state is the condition when holes (electrons) are filled in the CTN. The simulation structure was derived from the manufactured device [ 27 ].…”

Section: Simulation and Machine-learning Methodsmentioning

confidence: 99%

“…In addition, there is no correlation between inputs. The calibrated values are generally the median of each range, and the entire range is reasonable [ 27 , 30 ]. Other material properties of the CTN were fixed only to verify the effect of energetic-trap distributions.…”

Section: Simulation and Machine-learning Methodsmentioning

confidence: 99%

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method

et al. 2022

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“…At the saturation point in the 100-ns ISPP operation, the memory window of the NC-flash device was ≈8 V. The 100-ns ISPP operation is several hundred times faster than the typical ISPP operation pulse times of conventional flash memory. [16,17,21] In addition, the program efficiency extracted from the average ISPP slope was ≈0.9 (with a maximum slope of 1.1).…”

Section: Nc-flash Memory Devicementioning

confidence: 99%

“…However, the ISPP slope is generally nonlinear and lower than unity, which is critical for high‐performance MLC programming and reliability. [ 16,17 ]…”

Section: Introductionmentioning

confidence: 99%

“…However, the ISPP slope is generally nonlinear and lower than unity, which is critical for high-performance MLC programming and reliability. [16,17] To overcome the drawbacks of flash memories, various high-performance flash memory approaches with a functional blocking layer (BL) have been proposed. [18,19] To enhance the device performance of MLC flash memory and continued scaling, BLs with a higher k value are necessary.…”

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confidence: 99%

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The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

Kim

Lee

et al. 2022

Adv Funct Materials

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Flash memory is a promising candidate for use in in‐memory computing (IMC) owing to its multistate operations, high on/off ratio, non‐volatility, and the maturity of device technologies. However, its high operation voltage, slow operation speed, and string array structure severely degrade the energy efficiency of IMC. To address these challenges, a novel negative capacitance‐flash (NC‐flash) memory‐based IMC architecture is proposed. To stabilize and utilize the negative capacitance (NC) effect, a HfO2‐based reversible single‐domain ferroelectric (RSFE) layer is developed by coupling the flexoelectric and surface effects, which generates a large internal field and surface polarization pinning. Furthermore, NC‐flash memory is demonstrated for the first time by introducing a RSFE and dielectric heterostructure layer in which the NC effect is stabilized as a blocking layer. Consequently, an energy‐efficient and high‐throughput IMC is successfully demonstrated using an AND flash‐like cell arrangement and source‐follower/charge‐sharing vector‐matrix multiplication operation on a high‐performance NC‐flash memory.

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Dielectric breakdown of oxide films in electronic devices

Padovani,

La Torraca,

Strand

et al. 2024

Nat Rev Mater

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Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash

Cited by 18 publications

References 16 publications

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method

The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

Dielectric breakdown of oxide films in electronic devices

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