Origin of photoluminescence from colloidal gallium phosphide nanocrystals synthesized via a hot-injection method

Kim, Sung Woo; Lee, Kangha; Kim, Se-Jin; Kwon, O‐Pil; Heo, Jin Hyuk; Im, Sang Hyuk; Jeong, Sohee; Lee, DohChang; Kim, Sang–Wook

doi:10.1039/c4ra10115d

Cited by 20 publications

(18 citation statements)

References 40 publications

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“…We examined the decomposition temperature of indium and gallium precursors under similar reaction conditions using the phosphine precursor, surfactant, and the solvent. Reaction of indium and phosphine occurred at comparatively low temperatures of 100 °C and Ga-P reaction occurred above 200 °C 33 . Therefore, we assume that the InP QDs were initially synthesized followed by coating of GaP on the InP core.…”

Section: Resultsmentioning

confidence: 97%

Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

Park

Lee

Kim

2016

Sci Rep

Self Cite

110

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InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm; green QY: ~85%, FWHM: 41 nm; red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell.

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Section: Resultsmentioning

confidence: 97%

Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

Park

Lee

Kim

2016

Sci Rep

Self Cite

110

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“…This extraordinary photoluminescence attributed to the intramolecular π–π attraction and no covalent interactions facilitated by cyclophosphazene ring. A full range solid‐state UV–vis absorbance spectrum (Figure d) exhibits the absorbance in UV region (235–285 nm) with tail extended to 700 nm, proving the occurrence of various excited states . From these energetically different states, the multiple emissions occurred without changing the size and composition.…”

Section: Resultsmentioning

confidence: 95%

Poly(cyclotriphosphazene‐co‐tris(4‐hydroxyphenyl)ethane) Microspheres with Intrinsic Excitation Wavelength Tunable Multicolor Photoluminescence

Basharat

Liu

Zhang

et al. 2019

Macro Chemistry & Physics

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Functional photoluminescent materials with a tunable multicolor emission without incorporation of metals is the current focus on luminescent materials due to their multifaceted applications. Herein, novel poly(cyclotriphosphazene‐co‐tris(4‐hydroxyphenyl)ethane) microspheres are synthesized with size distribution of ≈0.8–1.6 µm by reacting hexachlorocyclotriphosphazene and tris(4‐hydroxyphenyl)ethane at different molar ratios under facile conditions. The thermogravimetric analysis shows that the microspheres are highly thermally stable with 10% weight loss at around 500 °C. Fluorescence microscopy results show that the microspheres emit three blue, green, and red colors with an emission maximum at 487, 530, and 623 nm under different excitation wavelengths of 365, 420, and 546 nm, respectively. Furthermore, under UV and visible (365 and 420 nm) excitations, microspheres demonstrate extraordinary photobleaching stability and highly intense luminescence for expending time and repeating excitations. The microspheres also demonstrate semiconductor‐like optical absorption at 235–285 nm with a tail extended to 700 nm. This exploration provides an insight for the preparation of intrinsic superior wavelength tunable multicolor emission materials from phosphazene. These microspheres are potential candidates for anti‐counterfeits, solar cells, full spectrum fluorescence emitters, organic light emitting diodes, biological, catalysis applications and unlock new areas of research on multicolor photoluminescence.

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Section: Results and Discussionmentioning

confidence: 99%

“…Recently, Kim et al . reported luminescence from the direct band gap transitions in GaP nanocrystals (NCs) synthesized via a hot-injection method, attributing it to a confinement-induced ‘ expansion of the band edge wave functions in momentum space ’, which enabled emission at wavelengths close to those of the indirect transition in the bulk. However, some of the reported emission features (double-peaked PL spectrum and multiexponential decay with lifetimes of the order of 1 ns) are strikingly similar to those reported by Furis et al .…”

Section: Results and Discussionmentioning

confidence: 99%

Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures

Califano

Zhou

2021

ACS Nano

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Indirect band gap semiconductor materials are routinely exploited in photonics, optoelectronics, and energy harvesting. However, their optical conversion efficiency is low, due to their poor optical properties, and a wide range of strategies, generally involving doping or alloying, has been explored to increase it, often, however, at the cost of changing their material properties and their band gap energy, which, in essence, amounts to changing them into different materials altogether. A key challenge is therefore to identify effective strategies to substantially enhance optical transitions at the band gap in these materials without sacrificing their intrinsic nature. Here, we show that this is indeed possible and that GaP can be transformed into a direct gap material by simple nanostructuring and surface engineering, while fully preserving its “identity”. We then distill the main ingredients of this procedure into a general recipe applicable to any indirect material and test it on AlAs, obtaining an increase of over 4 orders of magnitude in both emission intensity and radiative rates.

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Origin of photoluminescence from colloidal gallium phosphide nanocrystals synthesized via a hot-injection method

Abstract: The emission and excitation spectra of the GaP NCs indicate that two transitions, near the direct and indirect bandgaps of bulk GaP, are responsible for the luminescence.

Cited by 20 publications

References 40 publications

Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

Poly(cyclotriphosphazene‐co‐tris(4‐hydroxyphenyl)ethane) Microspheres with Intrinsic Excitation Wavelength Tunable Multicolor Photoluminescence

Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures

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