Outstanding Reliability of Heavy-Ion-Irradiated AlInN/GaN on Silicon HFETs

Vega, Nahuel; Dadgar, A.; Strittmatter, A.; Challa, Seshagiri Rao; Ferreyra, Romualdo A.; Kristukat, C.; Müller, N.; Debray, M. E.; Schmidt, Gordon; Witte, Hartmut; Christen, J.

doi:10.1109/tns.2019.2954216

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…Compared to the reference sample, DBE peak intensity is almost one order of magnitude less for 7.1 × 10 13 ions cm −2 and reaches the noise level for the highest irradiated sample. The BL also occurs for irradiated samples, but its peak intensity decreases with higher fluence only weakly compared to NBE, like in [12], and remains constant in spectral position.…”

Section: Resultsmentioning

confidence: 92%

“…The ion stopping range is 21 µm estimated by the SRIM calculations [12]. Therefore, the ions reach the Si-substrate and introduce deep defects.…”

Section: Resultsmentioning

confidence: 99%

“…The MiP features a focusing and scanning system for high-energy heavy S-ions at normal incidence allowing for a spatial resolution of about 500 × 500 µm 2 centered around the gate area of each dual gate HEMT. The whole irradiation equipment is explained in more detail in [12,14].…”

Section: Methodsmentioning

confidence: 99%

“…By using Au, the formation of dislocations, defect clusters, and traps may occur in the epitaxial layers [10]. In the case of singly charged ion irradiation, intrinsic point defects were seen to reduce the free carrier concentration by compensation effects [11] up to a complete isolation of GaN layers [12]. Interface defects were also found in GaN based HEMTs or diodes [13].…”

Section: Introductionmentioning

confidence: 99%

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Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors

Challa

Witte

Schmidt

et al. 2021

J. Phys. D: Appl. Phys.

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The characteristic energies of traps in InAlN/AlN/GaN high-electron mobility transistor structures on Si(111) substrates formed after irradiation with 75 MeV S-ions is studied by means of c-lattice parameter analysis, vertical IV-characteristics, micro-photoluminescence (µ-PL), photocurrent (PC) and thermally stimulated current (TSC) spectroscopy. From the lattice parameter analysis, point defect formation is concluded as the dominant source of defects upon irradiation. A strong compensation effect mani-fests itself through enhanced resistivity of the devices as found in vertical IV- measure-ments. The defect formation is detected optically by an additional PL-band within the green spectral region while defect states with threshold energies at 2.9 eV and 2.65 eV were observed by PC spectroscopy. TSC spectra exhibit two defect-related emissions between 300 K and 400 K with thermal activation energies of 0.78-0.82 eV and 0.91-0.98 eV, respectively. The data further supports the formation of Ga vacancies (VGa) and related complexes acting mainly as acceptors compensating the originally undoped n-type GaN buffer layers after irradiation.

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Section: Resultsmentioning

confidence: 92%

“…The ion stopping range is 21 µm estimated by the SRIM calculations [12]. Therefore, the ions reach the Si-substrate and introduce deep defects.…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%