Overcoming Redox Reactions at Perovskite-Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells

Boyd, Caleb C.; Shallcross, R. Clayton; Moot, Taylor; Kerner, Ross A.; Bertoluzzi, Luca; Onno, Arthur; Kavadiya, Shalinee; Chosy, Cullen; Wolf, Eli J.; Werner, Jérémie; Raiford, James A.; Paula, Camila de; Palmstrom, Axel F.; Yu, Zhengshan J.; Berry, Joseph J.; Bent, Stacey F.; Holman, Zachary C.; Luther, Joseph M.; Ratcliff, Erin L.; Armstrong, Neal R.; McGehee, Michael D.

doi:10.1016/j.joule.2020.06.004

Cited by 382 publications

(462 citation statements)

References 68 publications

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“…These conditions are similar to those that might be expected for encapsulated devices stored in ambient air. [ 59 ] In fact, the devices improved in performance after 5 months of storage in this environment, in which the PCE of Cs 3 Sb 2 Cl x I 9 ‐x more than doubled, increasing from 2.3% to 4.9% under FL illumination, and from 1.9% to 4.4% under WLED illumination. In the case of BiOI, the PCE increased from 2.4% to 4.0% under FL illumination, and remained stable at ≈3.4% under WLED illumination before and after 5 months of storage.…”

Section: Resultsmentioning

confidence: 99%

Lead‐Free Perovskite‐Inspired Absorbers for Indoor Photovoltaics

Peng

Huq

Mei

et al. 2020

Advanced Energy Materials

117

191

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sources at 1000 lux had an irradiance of 340 and 320 µW cm −2 , respectively. The accuracy of the light meter and power meter is the primary determinant of the uncertainty in the measured PCE values, which amounts to approximately ±6-7%, as can be determined from a straightforward uncertainty analysis based on the device testing conditions and the specifications of the power and light meters. Consequently, the PCE values are reported herein with 1 decimal place.

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Section: Resultsmentioning

confidence: 99%

Lead‐Free Perovskite‐Inspired Absorbers for Indoor Photovoltaics

Peng

Huq

Mei

et al. 2020

Advanced Energy Materials

117

191

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“…In HPs, these filaments are most likely formed by halogen vacancies. [ 32 ] Electrochemical reaction between NiO x and HP upon electrical bias, [ 33 ] and halide oxidation promoted by NiO x [ 34 ] might further increase halogen vacancies in the system and increase the probability of conductive filament formation. Upon sufficient negative bias application, the ions drift to the opposite direction rupturing the conductive filament and subsequently increase the device's resistance (RESET, Figure 1c).…”

Section: Resultsmentioning

confidence: 99%

“…This observation is in line with previous studies on NiO x /MAPbI 3 interface where Ni ≥3+ defect sites may act as both a Lewis acid that oxidizes X − anions and a Brønsted base that deprotonates the amine cations resulting in PbX 2 ‐rich perovskite domains at the interface. [ 34 ] The applied external bias during memristor measurements is expected to lower the oxidation potentials and reaction barriers further. The appearance of the PbBr 2 ‐rich domains upon bias application (Figure 2) testifies this further.…”

Section: Resultsmentioning

confidence: 99%

Diffusive and Drift Halide Perovskite Memristive Barristors as Nociceptive and Synaptic Emulators for Neuromorphic Computing

et al. 2021

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With the current research impetus on neuromorphic computing hardware, realizing efficient drift and diffusive memristors are considered critical milestones for the implementation of readout layers, selectors, and frameworks in deep learning and reservoir computing networks. Current demonstrations are predominantly limited to oxide insulators with a soft breakdown behavior. While organic ionotronic electrochemical materials offer an attractive alternative, their implementations thus far have been limited to features exploiting ionic drift a.k.a. drift memristor technology. Development of diffusive memristors with organic electrochemical materials is still at an early stage, and modulation of their switching dynamics remains unexplored. Here, halide perovskite (HP) memristive barristors (diodes with variable Schottky barriers) portraying tunable diffusive dynamics and ionic drift are proposed and experimentally demonstrated. An ion permissive poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate interface that promotes diffusive kinetics and an ion source nickel oxide (NiOx) interface that supports drift kinetics are identified to design diffusive and drift memristors, respectively, with methylammonuim lead bromide (CH3NH3PbBr3) as the switching matrix. In line with the recent interest on developing artificial afferent nerves as information channels bridging sensors and artificial neural networks, these HP memristive barristors are fashioned as nociceptive and synaptic emulators for neuromorphic sensory signal computing.

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“…Peak 2 at ∼855 eV contains contributions from several possible Ni hydroxide species including α and ß-Ni(OH) 2 , and NiOOH with Ni in the 2 + and 3 + oxidation states (Mansour, 1994a;Mansour and Melendres, 1994;Biesinger et al, 2009). Peak 3 (∼856.5 eV) contains contributions from both the hydroxide species as well as NiO due to multiplet splitting of the primary NiO peak (Mansour, 1994b;Boyd et al, 2020). Peak 4 at highest binding energy (∼858 eV) is attributed to Ni in the 3 + and 4 + oxidation states (Grosvenor et al, 2006).…”

Section: Solar Cell Device Performancementioning

confidence: 99%

Photonic Curing of Nickel Oxide Transport Layer and Perovskite Active Layer for Flexible Perovskite Solar Cells: A Path Towards High-Throughput Manufacturing

Piper

Daunis

et al. 2021

Front. Energy Res.

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High-throughput roll-to-roll (R2R) manufacturing of perovskite solar cells (PSCs) is currently limited by thermal processes that take tens of minutes each, translating to impractically long annealing tools at high web speeds. In addition, PSCs are usually made with metal oxide transport layer materials that require high temperatures for thermal annealing. Here, we demonstrate the fabrication of PSCs using photonic curing, instead of thermal annealing, to convert NiOx directly from sol-gel precursors for hole transport layers and to crystallize methylammonium lead iodide (MAPbI3) active layers on flexible Willow® Glass substrates. Photonic curing uses short, intense pulses of light to process materials at a high speed, hence it is compatible with R2R manufacturing. We achieved power conversion efficiencies (PCEs) of 11.7% in forward-scan and 10.9% in reverse-scan for PSCs made with photonic cured NiOx and MAPbI3 films. Furthermore, both NiOx and MAPbI3 films could be processed with a single photonic curing pulse, with a web speed of 5.7 m/min, and still produce PCEs comparable to thermally annealed control samples. Based on the single-pulse photonic curing condition for each film, we project a web speed of 26 m/min, laying a pathway to high-throughput production of perovskite solar modules.

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Overcoming Redox Reactions at Perovskite-Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells

Cited by 382 publications

References 68 publications

Lead‐Free Perovskite‐Inspired Absorbers for Indoor Photovoltaics

Lead‐Free Perovskite‐Inspired Absorbers for Indoor Photovoltaics

Diffusive and Drift Halide Perovskite Memristive Barristors as Nociceptive and Synaptic Emulators for Neuromorphic Computing

Photonic Curing of Nickel Oxide Transport Layer and Perovskite Active Layer for Flexible Perovskite Solar Cells: A Path Towards High-Throughput Manufacturing

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