Overlay metrology simulations

Seligson, Joel L.; Friedmann, Michael; Golovanevsky, Boris; Levinsky, Vladimir

doi:10.1117/12.473469

Cited by 3 publications

(2 citation statements)

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“…Another strong motivation to have accurate samples available is the increasing reliance on simulations and model-based metrology [4,5]. Often, the inputs required for reliable simulation results (e.g.…”

Section: Introductionmentioning

confidence: 99%

Calibration strategies for overlay and registration metrology

Silver¹,

Stocker²,

Attota³

et al. 2003

SPIE Proceedings

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Critical dimensions in current and next generation devices are driving the need for tighter overlay registration tolerances and improved overlay metrology tool accuracy and repeatability. Tool matching, performance evaluation, model-based metrology, and a move towards closed-loop image placement control all increase the importance of improved accuracy and calibration methodology. The National Institute of Standards and Technology (NIST) is introducing a calibrated overlay wafer standard. A number of calibration requirements must be addressed when using this standard, including identification of the best methods for evaluating measurement bias and uncertainties, proper data acquisition and analysis, and the best calibration strategy.

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Section: Introductionmentioning

confidence: 99%

Calibration strategies for overlay and registration metrology

Silver¹,

Stocker²,

Attota³

et al. 2003

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…New method to enhance and improve algorithm performance and data analysis is described by Attota et al [2]. Simulation platform, used for modeling both the effects of overlay metrology tool behavior and the impact of target design on the ultimate tool performance was presented by Joel et al [3] and Selingson et al [4].…”

Section: Introductionmentioning

confidence: 99%

Optimization of geometry of alignment mark using rigorous coupled-wave analysis (RCWA)

et al. 2005

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Simulation works are reported for the optimization of alignment mark geometries to enhance the magnitude of alignment signal and to improve precision of alignment and overlay process. Modeling of diffraction of electromagnetic wave on alignment mark is based on rigorous coupled-wave analysis (RCWA). This simulation allows calculating of overlay signal and optimizing of alignment mark. Using of RCWA approach significantly decreases computational time and required memory size comparing with FDTD. Overlay signal is usually measured using one of the diffraction orders. Thus the great advantage of using RCWA instead of FDTD is possibility to find amplitude of this diffracted order directly.

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