Overview Of Scatterometry Applications In High Volume Silicon Manufacturing

Raymond, Christopher J.

doi:10.1063/1.2062993

Cited by 71 publications

(41 citation statements)

References 8 publications

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“…Many variations of the idea behind a scatterometer have emerged in the last decades [6]. Some of the most widely used configurations are single incidence angle reflectometry, 2-Θ scatterometry, spectroscopic ellipsometry, Fourier scatterometry, interferometric Fourier scatterometry,etc., [7][8][9][10][11][12][13][14][15] with a wide range of applications [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

et al. 2014

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Abstract:Optical scatterometry is the state of art optical inspection technique for quality control in lithographic process. As such, any boost in its performance carries very relevant potential in semiconductor industry. Recently we have shown that coherent Fourier scatterometry (CFS) can lead to a notably improved sensitivity in the reconstruction of the geometry of printed gratings. In this work, we report on implementation of a CFS instrument, which confirms the predicted performances. The system, although currently operating at a relatively low numerical aperture (NA = 0.4) and long wavelength (633 nm) allows already the reconstruction of the grating parameters with nanometer accuracy, which is comparable to that of AFM and SEM measurements on the same sample, used as reference measurements. Additionally, 1 nm accuracy in lateral positioning has been demonstrated, corresponding to 0.08% of the pitch of the grating used in the actual experiment.

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Section: Introductionmentioning

confidence: 99%

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

et al. 2014

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“…In measurement comparisons scatterometers typically show an excellent linearity to CD-SEM tools. In many cases however, systematic offsets between both systems of the order of several nm up to few 10 nm [1][2][3] are observed. These systematic deviations may be connected both to the applied measurement methods and tools, to necessary approximations in the modeling and data analysis and to imperfections and limitations of the target structures.…”

Section: Introductionmentioning

confidence: 99%

Scatterometry reference standards to improve tool matching and traceability in lithographical nanomanufacturing

et al. 2015

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High quality scatterometry standard samples have been developed to improve the tool matching between different scatterometry methods and tools as well as with high resolution microscopic methods such as scanning electron microscopy or atomic force microscopy and to support traceable and absolute scatterometric critical dimension metrology in lithographic nanomanufacturing. First samples based on one dimensional Si or on Si 3 N 4 grating targets have been manufactured and characterized for this purpose. The etched gratings have periods down to 50 nm and contain areas of reduced density to enable AFM measurements for comparison. Each sample contains additionally at least one large area scatterometry target suitable for grazing incidence small angle X-ray scattering. We present the current design and the characterization of structure details and the grating quality based on AFM, optical, EUV and X-Ray scatterometry as well as spectroscopic ellipsometry measurements. The final traceable calibration of these standards is currently performed by applying and combining different scatterometric as well as imaging calibration methods. We present first calibration results and discuss the final design and the aimed specifications of the standard samples to face the tough requirements for future technology nodes in lithography.

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“…The main principle is based on the parameter reconstruction of the analyzed structures by a comparison of measured and simulated spectra containing intensity as well as polarization information. 22 An example of such a scatterometric measurement setup is the so called Fourier-Scatterometry (FS). The sample to be analyzed is illuminated through a high numerical aperture microscope objective, and the back focal plane of this objective, also called the pupil plane, is imaged with a CCDcamera.…”

Section: A Scatterometrymentioning

confidence: 99%

Development of functional sub-100 nm structures with 3D two-photon polymerization technique and optical methods for characterization

Paz¹,

Emons²,

Obata³

et al. 2012

Journal of Laser Applications

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Investigations of two-photon polymerization (TPP) with sub-100 nm in the structuring resolution are presented by using photosensitive sol-gel material. The high photosensitivity of this material allows for TPP using a large variety in laser pulse durations covering a range between sub-10 fs and ≈140 fs. In this study, the authors demonstrate TPP structuring to obtain sub-100 nm in resolution by different approaches, namely, by adding a cross-linker to the material and polymerization with sub-10 fs short pulses. Additionally, a simulation and model based characterization method for periodic sub-100 nm structures was implemented and applied in an experimental white light interference Fourier-Scatterometry setup.

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Overview Of Scatterometry Applications In High Volume Silicon Manufacturing

Cited by 71 publications

References 8 publications

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

Scatterometry reference standards to improve tool matching and traceability in lithographical nanomanufacturing

Development of functional sub-100 nm structures with 3D two-photon polymerization technique and optical methods for characterization

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