2007
DOI: 10.1016/j.microrel.2006.03.012
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Overview on ESD protection design for mixed-voltage I/O interfaces with high-voltage-tolerant power-rail ESD clamp circuits in low-voltage thin-oxide CMOS technology

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Cited by 6 publications
(1 citation statement)
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“…The layouts of these ESD devices differ discernibly. The pad ESD structures are the most critical and are laid out completely in accordance with the special ESD-optimized process rules [24,25] based on or similar to various published ESD-focused layout optimization methods for MOS transistors [26][27][28] and other devices [27,29]. The local mini structures follow the most critical of these rules.…”
Section: Overvoltage and Esd Safety Devicesmentioning
confidence: 99%
“…The layouts of these ESD devices differ discernibly. The pad ESD structures are the most critical and are laid out completely in accordance with the special ESD-optimized process rules [24,25] based on or similar to various published ESD-focused layout optimization methods for MOS transistors [26][27][28] and other devices [27,29]. The local mini structures follow the most critical of these rules.…”
Section: Overvoltage and Esd Safety Devicesmentioning
confidence: 99%