Oxidation of Silicon and Silicon Carbide in Ozone‐Containing Atmospheres at 973 K

Narushima, Takayuki; Kato, Masaya; Murase, Shin; Ouchi, Chiaki; Iguchi, Yasutaka

doi:10.1111/j.1151-2916.2002.tb00402.x

Cited by 16 publications

(18 citation statements)

References 39 publications

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“…We believe that the decomposition of CuO during heating proceeds through the reaction 2CuO → Cu 2 O + O because of a subsequent strong oxidation of the Si substrate occurring only in the presence of CuO. This explanation agrees well with results of the investigation of enhanced oxidation of silicon performed in ozone atmosphere where also a key role of atomic O has been demonstrated 10. The decomposition reaction is a driving force starting the oxidation process.…”

Section: Resultssupporting

confidence: 89%

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O Films during Thermal Annealing in Flowing Air

Musil

Zeman

Jirout

et al. 2007

Plasma Process. Polym.

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The article deals with oxidation of Cu, Zr, ZrCu, ZrO2, and Zr‐Cu‐O films during post‐deposition thermal annealing in flowing air. The films were deposited using dc unbalanced magnetron from pure or composed target in Ar or an Ar + O2 mixture. The oxidation behavior of the films was characterized by high‐temperature thermogravimetry and XRD. Mechanical properties were measured by a microindenter Fischerscope H100. Thermal annealing was carried out over a wide range from 300 to 1 300 °C. Special attention was devoted to the oxidation of Cu and to the effect of Cu content in Zr‐Cu‐O films on the oxidation resistance. It was shown that the conversion ${\rm CuO} \leftrightarrow {\rm Cu}_2 {\rm O}$ at ∼1 040 °C is a reversible process.

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Section: Resultssupporting

confidence: 89%

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O Films during Thermal Annealing in Flowing Air

Musil

Zeman

Jirout

et al. 2007

Plasma Process. Polym.

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“…Recently, the presence of carbon in silica layer after oxidation of silicon carbide at 973 K in ozonecontaining atmospheres has been shown. 30) These previous reports and the present result suggest that the oxygen partial pressure at the oxide/composite interface was lower than the equilibrium oxygen partial pressure of eq. (1).…”

Section: Observation Of Oxide Layer By Raman Spectroscopysupporting

confidence: 36%

Oxidation of Boron Carbide-Silicon Carbide Composite at 1073 to 1773 K

et al. 2003

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The oxidation behavior of B 4 C-(25-60 mol%)SiC composites prepared by arc-melting was investigated in the temperature range of 1073 to 1773 K using a thermogravimetric technique. Liquid borosilicate, solid SiO 2 and carbon were identified as oxidation products by X-ray diffraction and Raman spectroscopy. Mass gain was observed during oxidation at 1073 K, while mass loss due to the vaporization of boron oxide in liquid borosilicate was observed at temperatures of 1273 K and higher. In situ Raman spectra of the surface of B 4 C-SiC composites indicated that the silica concentration in the liquid borosilicate increased with increasing SiC content in the composite. Micro-Raman spectroscopy showed that carbon was enriched in the borosilicate layer close to the oxide/composite interface. The parabolic rate constants for B 4 C-50 mol%SiC composites at 1073 K were proportional to ambient oxygen partial pressures ranging between 30 and 100 kPa. The diffusion of oxygen molecules through the liquid borosilicate layer could be the rate-controlling process. The increase of SiC content in the B 4 C-SiC composites improved the oxidation resistance in both the mass gain and mass loss regions.

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“…Carbon incorporation in SiO 2 determined by SiC surface orientation is thought to be the cause. There are many reports of carbon in SiC oxidation products . Carbon substitution for oxygen in SiO 2 creates an SiOC glass with a more rigid network that is less permeable to O 2 molecular diffusion.…”

Section: Resultsmentioning

confidence: 99%

Oxidation kinetics strength of Hi‐Nicalon^TM‐S SiC fiber after oxidation in dry and wet air

2017

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Hi‐Nicalon™‐S SiC fiber strengths and Weibull moduli were measured after oxidation for up to 100 hours between 700°C and 1400°C in wet and dry air. SiO2 scale thickness and crystallization extent were measured by TEM. The effect of furnace environment on trace element levels in the SiO2 scales was characterized by secondary ion mass spectroscopy. Crystallization kinetics and Deal‐Grove oxidation kinetics for glass and crystalline scale, and the transition between them, were modeled and determined. Crystallization retards oxidation kinetics, and scale that formed in the crystalline state was heavily deformed by the growth stress accompanying SiC oxidation volume expansion. Glass scales formed in dry air slightly increased fiber strength. Glass scales formed in wet air did not increase strength, and in some cases significantly decreased strength. Scales more than 200 nm thick were usually partially or completely crystallized, which degraded fiber strength. Contamination of scales by trace impurities such as Al and Ca during heat treatment inhibited crystallization. The oxidation kinetics and the strengths of oxidized Hi‐Nicalon™‐S fibers are compared with previous studies on SiC fibers, bulk SiC, and single‐crystal SiC. Empirical relationships between oxidation temperature, time, scale thickness, and strength are determined and discussed.

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Oxidation of Silicon and Silicon Carbide in Ozone‐Containing Atmospheres at 973 K

Cited by 16 publications

References 39 publications

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O Films during Thermal Annealing in Flowing Air

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O Films during Thermal Annealing in Flowing Air

Oxidation of Boron Carbide-Silicon Carbide Composite at 1073 to 1773 K

Oxidation kinetics strength of Hi‐Nicalon^TM‐S SiC fiber after oxidation in dry and wet air

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Oxidation of Silicon and Silicon Carbide in Ozone‐Containing Atmospheres at 973 K

Cited by 16 publications

References 39 publications

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O Films during Thermal Annealing in Flowing Air

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O Films during Thermal Annealing in Flowing Air

Oxidation of Boron Carbide-Silicon Carbide Composite at 1073 to 1773 K

Oxidation kinetics strength of Hi‐NicalonTM‐S SiC fiber after oxidation in dry and wet air

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Oxidation kinetics strength of Hi‐Nicalon^TM‐S SiC fiber after oxidation in dry and wet air