Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

Abstract

Oxide precipitate nucleation at 300 8C in low resistivity As or Sb doped Czochralski Si is studied with and without prior rapid thermal processing (RTP). With prior RTP, a subsequent nucleation anneal even at 300 8C, leads to a high oxide precipitate density after a precipitation anneal at 1000 8C. As this is not observed without prior RTP, the effect is assumed to be related to the introduction of vacancies by RTP. As and Sb are deactivated by the formation of As x -V or Sb x -V complexes.The reduction of free carriers causes an increase of resistivity corresponding with a few times 10 17 cm À3 deactivated dopant atoms suggesting that about 10 17 cm À3 vacancies are frozen-in after RTP. During subsequent annealing at 300 8C, the resistivity recovers to its original value due to the release of vacancies that can facilitate homogeneous oxide precipitate nucleation or can lead to the formation of VO 2 and As-V-O or Sb-V-O complexes acting as heterogeneous nucleation centers that can grow further during subsequent anneals.

Oxygen Precipitation in Highly Doped Silicon Substrates

“…The impact of vacancies on oxygen precipitation in heavily doped silicon was studied recently 27,28 by means of high temperature rapid thermal anneal (RTA)-induced vacancy injection. Arsenic doped samples with a resistivity of 3 m • cm ([As] = 2.2 × 10 19 cm −3 ) and antimony doped samples with a resistivity of 20 m • cm ([Sb] = 1.3 × 10 18 cm −3 ) were studied.…”

(Invited) Oxygen Precipitation in Highly Doped Silicon Substrates

“…The impact of vacancies on oxygen precipitation in heavily doped silicon was studied recently (26,27) by means of high temperature rapid thermal anneal (RTA)-induced vacancy injection. Arsenic doped samples with a resistivity of 3 mΩ•cm ([As] = 2.2 ×10 19 cm -3 ) and antimony doped samples with a resistivity of 20 mΩ•cm ([Sb] = 1.3 ×10 18 cm -3 ) were studied.…”

Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors

“…The properties of oxygen are still an important issue in silicon technology and science, in particular considering oxygen transport, precipitation and formation of thermal donors (TDs) , and the phenomenon of anomalous long‐distance oxygen diffusion is worth analysing.…”