Oxidizing annealing effects on VO2 films with different microstructures

Dou, Yajie; Li, Jinbo; Cao, Mao‐Sheng; Su, Dezhi; Rehman, Fida; Zhang, Jiasong; Jin, Haibo

doi:10.1016/j.apsusc.2015.03.044

Cited by 61 publications

(21 citation statements)

References 33 publications

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“…For the VN_50 sample, the VO2 vanishes, leading to the V2O5 being the only crystalline phase present. These results show oxidation from V 4+ state to V 5+ state as the oxidation time increases and are consistent with the findings of several authors[24,31].Due to the overlapping of the diffraction peaks of the various vanadium oxide phases, Xray diffraction is not a powerful method to evince the formation of a pure VO2 phase. To verify the formation of VO2, cross-examination with Raman spectrometry is carried out for all oxidized films.Figure 2 presents room-temperature Raman spectra of the oxidized VN films, deposited on silicon substrates.The Si substrate signal (520 cm -1 ) is barely visible until 10 min of oxidation, thanks to the presence of the VN film that exhibits metallic behavior.…”

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confidence: 92%

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Oxidation of sputter-deposited vanadium nitride as a new precursor to achieve thermochromic VO2 thin films

García-Wong

Pilloud

Bruyère

et al. 2020

Solar Energy Materials and Solar Cells

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Elaboration of VO2 films with good thermochromic properties remains a challenge because it is mandatory to avoid other intermediate phases belonging to the vanadium-oxygen system. In this work, we propose vanadium nitride (VN) as a new precursor to obtain thermochromic VO2. VN films were reactively sputter-deposited on Si substrates by using an in-line semi-industrial machine. The films of 175 nm thickness were submitted to an annealing process implemented at different durations at 450°C. X-ray diffraction and Raman spectrometry were performed for structural characterizations of the oxidized films showing the presence of monoclinic VO2 in a wide range of oxidation time. As the annealing time increased, V2O5 appeared to affect the performance of the oxidized films. The TEM analysis carried out on the oxidized sample for 25 minutes showed that there is an abrupt interface between VN and VO2. The thermal-induced properties of the studied films were analyzed in terms of their electrical resistance employing a-2-four-point probe method and their emissivity modulation properties by infrared camera. The results showed a thermochromic behavior for the samples oxidized in the range of 15-35 min. On the contrary, the presence of residual VN layers in samples oxidized for less than 15 min and V2O5 in the ones annealed for more than 35 min hindered the thermochromic behavior of these films. Bringing together all the characterization techniques used a phase diagram of VN oxidation was plotted. The results of this work suggest that VN is an interesting new precursor to synthesize thermochromic VO2 films.

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confidence: 92%

“…However, the need to properly control the O2 flow rate makes this method not suitable on large surfaces. On the other hand, a post-annealing process in air or oxygen is commonly used to improve the quality of the deposited films [22][23][24][25]. Another interesting and simple proposal is the Sputtering Oxidation Coupling (SOC) method.…”

Section: Introductionmentioning

confidence: 99%

Oxidation of sputter-deposited vanadium nitride as a new precursor to achieve thermochromic VO2 thin films

García-Wong

Pilloud

Bruyère

et al. 2020

Solar Energy Materials and Solar Cells

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“…It is clear that VO 2 was the main content for all the films, and the contents of V 5+ , V 4+ and V 3+ were similar. According to previous studies [ 41 , 42 , 43 ], V 5+ could be attributed to the surface oxidization during storage in air, and the occurrence of V 3+ was to keep the charge neutrality in the VO 2 thin film.…”

Section: Resultsmentioning

confidence: 93%

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO2 Thin Film Fabricated by HiPIMS

Lin

Wang

Liu³

et al. 2017

Materials

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To fabricate high-quality polycrystalline VO2 thin film with a metal–insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO2 films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO2 film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations.

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“…The peaks marked (002) and ( 02) in Fig. S2a result from the monoclinic phase VO 2 30 . Raman peaks are distinguished in Fig.…”

Section: Resultsmentioning

confidence: 99%

A versatile photodetector assisted by photovoltaic and bolometric effects

Wei

Zheng

et al. 2020

Light Sci Appl

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The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for devices to stand out. Here, we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake. Vanadium dioxide is a classical semiconductor with a narrow bandgap, a high temperature coefficient of resistance, and phase transformation. Molybdenum ditelluride, a typical two-dimensional material, is often used to construct optoelectronic devices. The heterostructure can realize three different functional modes: (i) the p–n junction exhibits ultrasensitive detection (450 nm–2 μm) with a dark current down to 0.2 pA and a response time of 17 μs, (ii) the Schottky junction works stably under extreme conditions such as a high temperature of 400 K, and (iii) the bolometer shows ultrabroad spectrum detection exceeding 10 μm. The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation (LWIR). This type of photodetector combines versatile detection modes, shedding light on the hybrid application of novel and traditional materials, and is a prototype of advanced optoelectronic devices.

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Oxidizing annealing effects on VO2 films with different microstructures

Cited by 61 publications

References 33 publications

Oxidation of sputter-deposited vanadium nitride as a new precursor to achieve thermochromic VO2 thin films

Oxidation of sputter-deposited vanadium nitride as a new precursor to achieve thermochromic VO2 thin films

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO2 Thin Film Fabricated by HiPIMS

A versatile photodetector assisted by photovoltaic and bolometric effects

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