Oxygen and Nitrogen Co-Doped GeSbTe Thin Films for Phase-Change Optical Recording

Dimitrov, Dimitre; Lu, Yung-Hsin; Tseng, Mei-Rurng; Hsu, Wei-Chih; Shieh, Han–Ping D.

doi:10.1143/jjap.41.1656

Cited by 21 publications

(11 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4][5] This material demonstrates higher overwrite cyclability, a better signal-to-noise ratio and faster crystallization rate of the recording layer in phase change disks. 1 Several studies on the crystallization of GeSbTe-O films have been reported previously.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of crystallization of oxygen-doped amorphous Ge1Sb2Te4 thin films

Rivera-Rodrı́guez

Prokhorov

Trápaga

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

The aim of this article is to study the mechanism of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen (in the range of 4–28 at. %) using the electrical, optical, and x-ray measurements. Experimental results have shown that samples with oxygen in the range of about 4–10 at. % first crystallize into the Ge1Sb2Te4 fcc phase at temperatures in the range 130–145 °C, at higher temperature (around 275 °C) the fcc phase is transformed into the Ge1Sb2Te4 hexagonal phase. In samples with oxygen in the range of 10–15 at. % the crystallization occurs in two stages producing samples where Ge1Sb2Te4 and the Sb2Te3 coexist. Samples with higher oxygen content, in the range of 15–28 at. % the films crystallized into the rhombohedral Sb2Te3 phase due to the formation of amorphous germanium oxide. The experimental results have been interpreted employing the Johnson–Avrami–Mehl–Kolmogorov theory. Using isothermal measurements and the time dependence of the Avrami exponent, three different crystallization mechanisms are proposed for material with different content of oxygen.

show abstract

Section: Introductionmentioning

confidence: 99%

Mechanism of crystallization of oxygen-doped amorphous Ge1Sb2Te4 thin films

Rivera-Rodrı́guez

Prokhorov

Trápaga

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Elemental Ge is considered to be effective in forming covalent bonds and reducing the atomic diffusivity which can provide sufficient amorphous stability [12]. Alloys containing Ge element are receiving the greatest attention in the nonvolatile memory device application called phase change random accesses memory (PCRAM) especially for (Ge 2 Sb 2 Te 5 ) based material systems [13][14][15]. Now days Ge-Sb-Te chalcogenide, which undergo phase transformations under the action of external stimuli, are of tremendous technological importance ranging from optical data storage to phase-change random access memory (PRAM), exhibiting the best performance for DVD-RAM in terms of speed and stability, Ge 2 Sb 2 Te 5 (hereafter GST) is also currently the most focused phase-change alloy [16-18].…”

Section: Introductionmentioning

confidence: 99%

Phase transition characteristics of (Ge4Sb4Te6) thin films using high resolution transmission electron microscope and optical properties

Mandouh¹,

Zayed²,

Hammad³

et al. 2016

IOSR

View full text Add to dashboard Cite

show abstract

“…Elemental Ge is considered to be effective in Contents lists available at ScienceDirect journal homepage: www.elsevier.com/locate/mssp forming covalent bonds and reducing the atomic diffusivity, which can provide sufficient amorphous stability [13]. Therefore, alloys containing Ge element are receiving the greatest attention in the nonvolatile memory device application (called PCRAM) especially for Ge 2 Sb 2 Te 5 -based materials systems [14][15][16].…”

Section: Introductionmentioning

confidence: 99%