Oxygen-assisted direct growth of large-domain and high-quality graphene on glass targeting advanced optical filter applications

Liu, Bingzhi; Gu, Wei; Zhou, Le; Chen, Zhaolong; Nie, Yufeng; Tan, Congwei; Ci, Haina; Wei, Nan; Cui, Lingzhi; Gao, Xuan; Sun, Jingyu; Zhang, Yanfeng; Liu, Zhongfan

doi:10.1007/s12274-020-3080-6

Cited by 22 publications

(26 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured and corrected values of five sets of points were 50.3167 Ω·sq −1 , 44.4257 Ω·sq −1 , 50.0836 Ω·sq −1 , 62.0398 Ω·sq −1 , 62.751 Ω·sq −1 , respectively. These resistance values are more than one order smaller than those of the graphene glasses synthesized by CVD (~1000 Ω·sq −1 ) [ 21 ] and four times smaller than the graphene synthesized by the solid-phase laser direct writing (~205 ± 19 Ω·sq −1 ) [ 22 ]. The average sheet resistance of the graphene film (53.9234 Ω·sq −1 ) showed a good electrical conductivity of the graphene-functionalized Si substrate, indicating the formation of large area and continuous graphene on Si.…”

Section: Resultsmentioning

confidence: 99%

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Wang

et al. 2021

Molecules

View full text Add to dashboard Cite

Graphene has many excellent optical, electrical and mechanical properties due to its unique two-dimensional structure. High-efficiency preparation of large area graphene film is the key to achieve its industrial applications. In this paper, an ultrafast quenching method was firstly carried out to flow a single pulse current through the surface of a Si wafer with a size of 10 mm × 10 mm for growing fully covered graphene film. The wafer surface was firstly coated with a 5-nm-thick carbon layer and then a 25-nm-thick nickel layer by magnetron sputtering. The optimum quenching conditions are a pulse current of 10 A and a pulse width of 2 s. The thus-prepared few-layered graphene film was proved to cover the substrate fully, showing a high conductivity. Our method is simple and highly efficient and does not need any high-power equipment. It is not limited by the size of the heating facility due to its self-heating feature, providing the potential to scale up the size of the substrates easily. Furthermore, this method can be applied to a variety of dielectric substrates, such as glass and quartz.

show abstract

Section: Resultsmentioning

confidence: 99%

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Wang

et al. 2021

Molecules

View full text Add to dashboard Cite

show abstract

“…[ 44,81 ] Another way to assist direct growth is to introduce gaseous promotors, including metal vapors and trace of oxygen/water molecules; nevertheless, the resulting graphene performances are still unsatisfactory. [ 106 ] To avoid the graphene transfer procedures and offset the low catalytic activity of insulating substrates, a combined strategy by coating a thin metal layer as the catalyst on target insulators to derive graphene films at the metal/insulator interface, followed by the removal of the sacrificial metal coating after graphene growth. [ 107 ] In this sense, the unrecyclable metal layers, inevitable metal contaminations, and limited improvement of graphene quality still set big hurdles.…”

Section: Challenges Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

“…Oxygen is a preferred surface activator, which is typically introduced into the CVD reactor by the form of O 2 , CO 2 , and H 2 O to reduce the nucleation density of graphene. [ 106,139,140 ] Other nonmetallic gaseous species, such as silane and germane, were also considered as catalysts for direct growth of wafer‐scale graphene films. [ 86,90 ]…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Jiang

Wang

Sun

et al. 2021

Small

Self Cite

View full text Add to dashboard Cite

However, the high cost of SiC wafers brings an insurmountable barrier toward the batch production. Mature transfer techniques are also under development for the application in microelectronics. Additionally, the number of layers seems not well controlled, resulting in an unsatisfied nonuniformity over the entire 2-in. wafer. [35] Raman mapping for the 2D peak indicates the variation of layer thickness and strain (Figure 2b). [35] Upon correcting the peak shift caused by the strain, the map in Figure 2c ultimately shows that the graphene epitaxially grown on SiC is dominantly 1-2 layers. [35] Meanwhile, reduced graphene oxide (rGO) could also fulfill wafer-scale films affording high uniformity. [33,[36][37][38] Recently, Juvaid et al. reported the synthesis rGO films on target substrates by pulsed laser deposition (PLD), as depicted in Figure 2d. [33] A 4-in. wafer can be attained (Figure 2e), which is featured by smooth surface, high transparency, and excellent uniformity (evaluated by Raman spectroscopy in Figure 2f). [33] Despite these advances, the process of chemical oxidation introduces a large number of defects in the crystalline structure of rGO, resulting in marked decline in the electrical and thermal properties. [12] CVD is found to be the most widely used technique in semiconductor industry to synthesize thin films, which, in particular, is able to produce large-area graphene films on metallic or insulating substrates in controllable fashions. [39][40][41][42][43] In a typical CVD process for graphene synthesis, carbon gaseous precursor flows through the hightemperature reaction zone and generates active reaction species for subsequent nucleation and growth of graphene Figure 1. Various types of devices based on wafer-scale graphene films. The central panel: photos of wafer-scale graphene devices.Reproduced with permission. [16] Copyright 2010, Science. Reproduced with permission. [15] Copyright 2020, Springer Nature. Reproduced with permission. [17] Copyright 2019, Wiley-VCH. Reproduced with permission. [18] Copyright 2019, Wiley-VCH. a) Schematic illustration of the transfer process of CVD graphene onto a single CMOS die containing a read-out circuit of the image sensor. Reproduced with permission. [19] Copyright 2017, Springer Nature. b) 3D schematic illustration of a graphene-based waveguide-integrated electro-absorption modulator. Reproduced with permission. [20] Copyright 2011, Springer Nature. c) Schematic of a dual-gate bilayer graphene transistor device. Reproduced with permission. [21] Copyright 2010, American Chemical Society. d) Tilted view scanning electron microscopy image of a graphene receiver integrated circuit, showing the integration architecture of key components including graphene field effect transistor (GFET). Reproduced with permission. [22] Copyright 2014, Springer Nature. e) Schematic of device architectures proposed in resistive random access memory technology based on graphene and related materials. Reproduced with permission. [23] Copyright 2017, Wiley-VCH. f ) Schematic re...

show abstract

“…Following the observed shape evolution of graphene, it can be deduced that near-surface Ar nanobubbles first weaken the out-of-plane interaction between graphene overlayers and Ru(0001) surfaces, which facilitates the simultaneous removal of surface-stepdependent in-plane interactions. These two factors contribute to the isotropic growth of graphene with a quasi-freestanding feature, like the growth behavior on liquid substrates [17][18][19][20].…”

Section: Transition From Anisotropic To Isotropic Growth Of Graphene On Ru(0001) By Dosing Near-surface Ar Nanobubblesmentioning

confidence: 99%

“…In weak overlayer-substrate interaction issues, such as Ir, Pt, and Cu, the growth front of the 2D film extends across both the uphill and downhill steps but the out-of-plane coupling strength can still induce in-plane anisotropic growth [13][14][15][16]. In quasi-freestanding regimes, such as 2D films on liquid metal or liquid glass, overlayers grow isotropically, indicating that in-plane interaction is fully removed [17][18][19][20]. Despite recent achievements, the influence of 2D overlayer-substrate interactions on the growth and coalescence behavior has not been systematically studied; consequently, the understanding of interfacial interactions during 2D film CVD processes is insufficient.…”

Section: Introductionmentioning

confidence: 99%

Growth, coalescence, and etching of two-dimensional overlayers on metals modulated by near-surface Ar nanobubbles

et al. 2021

View full text Add to dashboard Cite

The synthesis of high-quality ultrathin overlayers is critically dependent on the surface structure of substrates, especially involving the overlayer-substrate interaction. By using in situ surface measurements, we demonstrate that the overlayer-substrate interaction can be tuned by doping near-surface Ar nanobubbles. The interfacial coupling strength significantly decreases with near-surface Ar nanobubbles, accompanying by an “anisotropic to isotropic” growth transformation. On the substrate containing near-surface Ar, the growth front crosses entire surface atomic steps in both uphill and downhill directions with no difference, and thus, the morphology of the two-dimensional (2D) overlayer exhibits a round-shape. Especially, the round-shaped 2D overlayers coalesce seamlessly with a growth acceleration in the approaching direction, which is barely observed in the synthesis of 2D materials. This can be attributed to the immigration lifetime and diffusion rate of growth species, which depends on the overlayer-substrate interaction and the surface catalysis. Furthermore, the “round to hexagon” morphological transition is achieved by etching-regrowth, revealing the inherent growth kinetics under quasi-freestanding conditions. These findings provide a novel promising way to modulate the growth, coalescence, and etching dynamics of 2D materials on solid surfaces by adjusting the strength of overlayer-substrate interaction, which contributes to optimization of large-scale production of 2D material crystals.

show abstract

Oxygen-assisted direct growth of large-domain and high-quality graphene on glass targeting advanced optical filter applications

Cited by 22 publications

References 40 publications

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Growth, coalescence, and etching of two-dimensional overlayers on metals modulated by near-surface Ar nanobubbles

Contact Info

Product

Resources

About