Oxygen atoms on Si(100)-(2×1): Imaging with scanning tunneling microscopy

Trenhaile, B. R.; Agrawal, Abhishek; Weaver, J. H.

doi:10.1063/1.2362623

Cited by 22 publications

(27 citation statements)

References 24 publications

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“…Supporting this view, it has been shown that the thermal decomposition of H 2 O on Si͑100͒-2 ϫ 1 starts with the insertion of O atoms into the Si-Si dimer bond. 28 Although additional oxygen atoms can insert into the Si-Si backbond at higher temperatures, there is no evidence of oxygen migration beyond the second layer in the temperature range of 300-900 K. [27][28][29][37][38][39] On the other hand, complete decomposition of NH 3 on Si͑100͒-2 ϫ 1 results in N atoms residing between the third and fifth layers, [32][33][34] indicating that in this case subsurface migration is dominant. Moreover, other investigations have suggested that ͑Si͒NH 2 species undergo subsurface insertion, either preferentially or competing with surface insertion.…”

Section: Introductionmentioning

confidence: 98%

“…26,31 Adsorption of both NH 3 and H 2 O has been studied not only to functionalize a surface but also to unveil the initial stages of surface nitridation 18,19,[32][33][34][35][36] and oxidation. [27][28][29][37][38][39] For the NH 3 / Si͑100͒ system, in particular, a previous publication extensively reviewed the literature available. 40 In the first stage of adsorbate incorporation into a Si͑100͒-2 ϫ 1 surface, the insertion can take place either into a Si-Si dimer bond or into a Si-Si backbond, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Role of surface strain in the subsurface migration of adsorbates on silicon

Rodríguez‐Reyes

Teplyakov

2008

Phys. Rev. B

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Modification of silicon surfaces through the insertion of atoms or even small molecular fragments of an adsorbate into a silicon-silicon bond can be affected tremendously by the effects of surface strain. This process takes place as either surface insertion or subsurface insertion, depending on whether the inserted species remains within the topmost layer or undergoes migration into subsurface layers, respectively. Using densityfunctional-theory cluster calculations, we show that insertion can be both thermodynamically and kinetically favorable if it takes place in such a way that surface strain is mitigated by neighboring surface sites. By considering the thermal decomposition of ammonia ͑NH 3 ͒ adsorbed on a Si͑100͒-2 ϫ 1 surface, we find that insertion mainly depends on the initial distribution of adsorbates and the orientation taken by inserted species with respect to neighboring structures along the surface. These factors seem to greatly affect the subsurface insertion, which can therefore be considered a long-range process. On the other hand, for surface-insertion processes the factors mentioned above are less influential, and insertion has more of a local character. Understanding the factors governing insertion mechanisms may lead to development of more approaches to surface functionalization, where the adsorbates decorating the surface can decompose in a controllable fashion.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Role of surface strain in the subsurface migration of adsorbates on silicon

Rodríguez‐Reyes

Teplyakov

2008

Phys. Rev. B

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“…18 The sample was then annealed at 700 K for 5 min to obtain a saturated Si͑100͒-͑2 ϫ 1͒ surface with very low defect density. 19 SSE was achieved by exposing this surface to Cl 2 at 750-825 K. The flux was varied from 3 to 40 ϫ 10 −3 ML/ s, where 1 ML corresponds to the atom density of Si͑100͒.…”

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confidence: 99%

Atomic processes during Cl supersaturation etching ofSi(100)−(2×1)

et al. 2009

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Supersaturation etching starts with Cl insertion into Si-Si bonds of Si͑100͒ and leads to the desorption of SiCl 2 pairs. During etching, insertion occurs through a Cl 2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.

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“…Surface cleaning has been described elsewhere. 19 Starting surfaces had point defects that amounted to 0.01-0.02 monolayer ͑ML͒, primarily in the form of dimer vacancies. Once cleaned, the surfaces were flash annealed FIG.…”

Section: Methodsmentioning

confidence: 99%

Adsorbate-induced roughening of Si(100) by interactions at steps

et al. 2010

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Through a detailed study of Cl adsorption on Si͑100͒ using scanning-tunneling microscopy, we identified sites at steps where adsorption leads to roughening and the formation of extended pits and regrowth structures. Using the equilibrium occupation probabilities obtained from experiment, we were able to identify firstnearest-neighbor interactions that destabilized the surface and, when included in Monte Carlo simulations, reproduced the observed pit and regrowth structures. These findings force a reevaluation of currently proposed mechanisms for roughening.

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Oxygen atoms on Si(100)-(2×1): Imaging with scanning tunneling microscopy

Cited by 22 publications

References 24 publications

Role of surface strain in the subsurface migration of adsorbates on silicon

Role of surface strain in the subsurface migration of adsorbates on silicon

Atomic processes during Cl supersaturation etching ofSi(100)−(2×1)

Adsorbate-induced roughening of Si(100) by interactions at steps

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