Oxygen precipitation in neutron‐irradiated Czochralski silicon annealed at elevated temperature

Cui, Can; Yang, Deren; Ma, Xiangyang; Fan, Rong; Que, Duanlin

doi:10.1002/pssa.200521141

Cited by 8 publications

(4 citation statements)

References 23 publications

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“…Oxygen precipitation processes are known to be sensitive to the presence of other impurities, especially carbon 6,7 as well as radiationproduced defects. 8,9 Besides oxygen, carbon is another important impurity being sometimes present in Cz-Si crystals in substantial concentrations. Normally, carbon atoms are substitutional in the Si lattice and they are electrically inactive.…”

Section: Introductionmentioning

confidence: 99%

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

Londos

Andrianakis

Emtsev

et al. 2009

Journal of Applied Physics

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The annealing behavior of the oxygen and carbon impurities in Czochralski grown silicon ͑Cz-Si͒ was investigated in electron-and neutron-irradiated materials. The irradiated samples were subjected to isochronal anneals of up to ϳ1000°C, and the evolution of oxygen and carbon concentrations was monitored by means of infrared spectroscopy from the amplitudes of the 1106 and 605 cm −1 bands of the two impurities correspondingly. It was found that the electron irradiation does not affect the temperature of annealing of oxygen, although in the neutron-irradiated samples the oxygen band begins to decay in the spectra at a lower temperature than that in the nonirradiated samples. This behavior could be determined by supersaturation of vacancies mainly liberated from disordered regions in the latter material. This assists the oxygen aggregation process. Regarding carbon evolution, it was found that in the irradiated samples the annealing out of the 605 cm −1 band occurs at a lower temperature than that of the nonirradiated samples. Prior to the onset of decay of the 605 cm −1 band an inverse annealing stage was observed in the irradiated samples, indicating partial restoration of substitutional carbon. The general behavior was discussed with respect to the supersaturation of intrinsic defects, mainly self-interstitials. As a result, large C N ͑Si I ͒ M complexes are formed. There are two processes running in parallel: the recovery of substitutional carbon from carbon-related defects and C N ͑Si I ͒ M complexes and the transformation of C N ͑Si I ͒ M complexes to SiC-based precipitates. Noticeably, in electron-irradiated Ge-doped Si the inverse annealing stage of substitutional carbon is suppressed. Furthermore, our results showed that the Ge doping of Cz-Si of up to 2 ϫ 10 20 cm −3 does not practically affect the temperature at which oxygen and carbon are completely lost in irradiated Cz-Si:Ge.

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Section: Introductionmentioning

confidence: 99%

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

Londos

Andrianakis

Emtsev

et al. 2009

Journal of Applied Physics

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“…It was found that in the irradiated material C suppresses the formation of spheroidal precipitates although it enhances the platelet the O and C impurities, including divacancies, oxygenvacancy and oxygen-carbon complexes [9,12,15]. There are interactions between the two kinds of defects and in particular radiation defects usually affect the growth and evolution of precipitates [16,17].…”

Section: Introductionmentioning

confidence: 99%

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Sgourou

Angeletos

Chroneos

et al. 2017

J Mater Sci: Mater Electron

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“…Oxygen does not normally occupy a substitutional site, however, in irradiated crystals the mobile vacancy can be trapped at the O i atom and forms the vacancy-oxygen complex. [4,5] Electron irradiation of Czochralski-grown silicon (Cz-Si) leads to the formation of oxygen-vacancy complexes, so-called A-centres, where a single oxygen atom occupies a vacant site, with a slight off-centre displacement. The A-centre has been studied extensively by many experimental techniques.…”

Section: Introductionmentioning

confidence: 99%

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

et al. 2009

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This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5 MeV) at 360 K. Two groups of samples with low [O i ] = 6.9 × 10 17 cm −3 and high [O i ] = 1.06 × 10 18 cm −3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO 2 in lower concentration of oxygen specimen gets to maximum at 450 • C and then dissapears at 500 • C, accompanied with the appearing of VO 3 . For both kinds of specimens, the concentration of VO 3 reachs to maximum at 550 • C and does not disappear completely at 600 • C.

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Oxygen precipitation in neutron‐irradiated Czochralski silicon annealed at elevated temperature

Cited by 8 publications

References 23 publications

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

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