Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

Navas, Javier; Araújo, D.; Piñero, José Carlos; Sánchez‐Coronilla, Antonio; Blanco, E.; Villar, Pilar; Alcántara, Rodrigo; Montserrat, J.; Florentin, Matthieu; Eon, David; Pernot, Julien

doi:10.1016/j.apsusc.2017.10.065

Cited by 46 publications

(45 citation statements)

References 55 publications

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“…The underneath heavily boron-doped (N A ≈ 5 × 10 20 cm −3 ) metallic diamond p+ layer acts as a low resistive ohmic contact electrode in order to reduce the series resistance. Oxygen termination of the semiconducting diamond top layer was done thanks to a vacuum ultra violet (VUV) ozone treatment [ 11 , 19 ]. The Al 2 O 3 gate oxide was deposited by ALD on the whole sample surface using a Savannah 100 deposition system from Cambridge NanoTech.…”

Section: Methodsmentioning

confidence: 99%

“…Up to very recently, diamond field effect transistors (FETs) were usually based on a heavily boron-doped channel or a hydrogen-terminated (H-diamond) surface channel [ 5 , 6 , 7 , 8 , 9 ]. In both approximations, the carrier mobility is relatively low (<200 cm 2 /Vs), which motivates new geometries as bulk channel FET [ 10 , 11 ] where surface effects and impurity scattering (high doping) did not limit the device performance. In this more classical approach, the relatively high bandgap value of diamond makes it difficult to choose an adequate gate oxide if accumulation, as well as depletion mode, wants to be delivered.…”

Section: Introductionmentioning

confidence: 99%

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Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

et al. 2018

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In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demonstrated to avoid such leaks. Transmission electron microscopy analysis shows that high temperature atomic layer deposition, followed by annealing, generates monocrystalline reconstruction of the gate layer with an optimum lattice orientation with respect to the underneath diamond lattice. Despite the generation of γ-alumina, such lattice control is shown to prohibit the carrier transfer at interfaces and across the oxide.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

et al. 2018

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“…The X-ray photoelectron spectroscopy (XPS) technique has been widely employed for studying diamond chemical terminations [22][23][24][25][26][27], but the interpretation of the peaks are still controversial. The detection of the H-diamond surface downward band bending was supported by ARXPS experiments that, on the other hand, are rarely found in the literature.…”

Section: Introductionmentioning

confidence: 99%

H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

et al. 2020

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Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The resultant surfaces present a p-type surface conductive layer with interest in power electronic applications. However, the mechanism for this behavior is still under discussion. Upward band bending due to surface transfer doping is the most accepted model, but has not been experimentally probed as of yet. Recently, a downward band bending very near the surface due to shallow acceptors has been proposed to coexist with surface transfer doping, explaining most of the observed phenomena. In this work, a new approach to the measurement of band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) is proposed. Based on this new interpretation, a downward band bending of 0.67 eV extended over 0.5 nm was evidenced on a (100) H-terminated diamond surface.

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“…The first is normally obtained by hydrogen plasma and shows a stable uniform 2 × 1 reconstruction, low roughness, a surface conductive layer, and negative electron affinity [3][4][5][6][7][8]. On the other hand, oxygen-terminated surfaces can be obtained by a wide range of treatments such as acid treatments [9,10], oxygen plasma [11], or vacuum ultraviolet (VUV)/ozone [9,12], among others. The resultant surface is not conductive and shows positive electron affinity.…”

Section: Introductionmentioning

confidence: 99%

“…In contrast, VUV/ozone treatment leads to a more controlled process, improving the quality of the interfaces of the electronic devices [9][10][11][12]. A 1 × 1:O surface reconstruction has been deduced by surface electron diffraction-related techniques for different oxygenation treatments, including acid treatment [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models

et al. 2020

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Diamond surface properties show a strong dependence on its chemical termination. Hydrogen-terminated and oxygen-terminated diamonds are the most studied terminations with many applications in the electronic and bioelectronic device field. One of the main techniques for the characterization of diamond surface terminations is X-ray photoelectron spectroscopy (XPS). In this sense, the use of angle-resolved XPS (ARXPS) experiments allows obtaining depth-dependent information used here to evidence (100)-O-terminated diamond surface atomic configuration when fabricated by acid treatment. The results were used to compare the chemistry changes occurring during the oxidation process using a sublayer XPS intensity model. The formation of non-diamond carbon phases at the subsurface and higher oxygen contents were shown to result from the oxygenation treatment. A new (100) 1 × 1:O surface reconstruction model is proposed to explain the XPS quantification results of O-terminated diamond.

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Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

Cited by 46 publications

References 55 publications

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models

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