P‐11: Channel‐Etched CAAC‐OS FETs using Multi‐layer IGZO

Abstract

The improvement in the reliability of a channel-etched fieldeffect transistor (FET) using a buried channel effect was achieved by stacking In-Ga-Zn-O (IGZO) films with different compositions.In addition, a liquid crystal display panel using an IGZO multilayer c-axis-aligned crystal FET for a backplane was fabricated.

P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS

“…Our research group previously reported on back-channel-etched (BCE) and top-gate self-aligned (TGSA) field-effect transistors (FETs) with oxide semiconductor (OS) active layers [1][2][3][4][5][6]. OSbased FET (OSFET) technologies have recently been widely applied.…”

9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length

“…The authors previously developed OS FETs with back-channeletched (BCE) and top-gate self-aligned (TGSA) structures [1][2][3][4][5][6]. BCE OS FETs can be fabricated using fewer masks than those required for TGSA OS FETs.…”