P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT

Abstract

We fabricated inverted‐staggered amorphous In‐Ga‐Zn‐O (a‐IGZO) TFTs and measured temperature dependence of the TFT characteristics. A Vth shift between 120°C and 180°C was as large as about 4 V. In the analysis with 2‐D numerical simulation, we could reproduce the measured result by assuming two kinds of donor‐like states as carrier generation sources.

Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

“…In particular, it is also difficult to expand the extracted g TD (E) value to a practical device model, since the energy level distribution of the extracted g TD (E) value cannot be exactly mapped to the subbandgap energy level of the a-IGZO active layer in TFT devices. Meanwhile, Godo et al [13] and Fung et al [14] extracted g TD (E) and g OV (E) by fitting the TCAD simulation results with measured I-V data and also showed their subgap-DOSbased AOS TFT model. However, most of the parameters were employed from literatures, and the uniqueness of the extracted DOS parameters was not guaranteed.…”

A 13.5‐in. Quad‐FHD flexible CAAC‐OS AMOLED display with long‐life OLED device structure

“…The method employed to manufacture a flexible display is described in detail. First, an inorganic separation layer is deposited on a glass substrate, and an FET array is subsequently fabricated on the inorganic separation layer using a CAAC-OS FET, 9,[17][18][19] wirings, and pixel electrodes. After an OLED is deposited on the glass substrate and a color-filter substrate is bonded to the substrate, the OLED and other components are separated from the glass substrate, and the separated elements are transferred to a resin film.…”

A novel field‐sequential blue‐phase‐mode AMLCD

“…The use of amorphous In-Ga-Zn-oxide as a semiconductor layer along with crystalline In-Ga-Zn-oxide have long been researched for a long time, and its crystal structure has became widely known. [12][13][14][15][16][17][18][19][20][21][22] The layer comprised of In-Ga-Zn-oxide we used this time has a crystallinity that cannot be seen in an amorphous oxide semiconductor. Figures 16 and 17 show planar and cross-sectional TEM images of an amorphous In-Ga-Zn-oxide film and our In-Ga-Zn-oxide film, and these TEM images of our In-Ga-Zn-oxide film indicate that the crystallinity has an atomic order that shows c-axis alignment.…”