p-<font>GaN</font>/n-<font>Si</font> HETEROJUNCTION PHOTODIODES

Chuah, L. S.; Hassan, Z.; Hassan, H. Abu; Mourad, M. Hussein

doi:10.1142/s0218625x08011871

Cited by 6 publications

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From Figure 3, a strong near band edge emission at 363.232 nm was observed which is attributed to the band edge emission of GaN. This value is comparable to those quoted by Zhang et al [6] and Chuah et al [7]. No yellow band emission is observed, this indicates that the film has a good optical quality.…”

Section: Resultssupporting

confidence: 83%

The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

Yusoff

Mahyuddin

Hassan

et al. 2011

AMR

View full text Add to dashboard Cite

In this paper, we studied growth of AlN/GaN/AlN on Si (111) by using plasma assisted molecular beam epitaxy (PA-MBE) system. The structural and optical characteristics of the sample have been investigated by using high resolution X-ray diffraction (HR-XRD), Raman spectroscopy and photoluminescence (PL). PL spectrum of the sample has shown sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the sample. The silver (Ag) metal contact was then deposited on the sample followed by thermal treatment at 500°C and 700°C, respectively. Treated sample at 700°C showed good spherical Ag islands on sample compared to the treated sample at 500°C. The effect of Ag islands on the electrical characteristics of sample was also examined by usingI-Vmeasurement. The results showed that the treated sample at 700°C has decreased the photo-current of Schottky diode.

show abstract

Section: Resultssupporting

confidence: 83%

The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

Yusoff

Mahyuddin

Hassan

et al. 2011

AMR

View full text Add to dashboard Cite

show abstract

“…However, it will delay the response/decay time of the photodetectors at the same time. Nanoporous GaN is one of the widely used nanostructures for UV photodetectors because of its strong light harvesting, easy preparation, and low cost 17–20. However, most reports are mainly focused on vertical or 3D nanoporous GaN, in which the light absorption is limited by porosity and epitaxial thickness 13.…”

Section: Introductionmentioning

confidence: 99%

Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure

et al. 2020

Advanced Optical Materials

View full text Add to dashboard Cite

Composite nanostructures with plasmonic metals can introduce optical resonances and enhance optoelectronic performance significantly. In this work, novel lateral porous GaN/Ag nanowires (NWs) composite nanostructure‐based UV photodetectors were designed and fabricated, and the detectivity is up to 1015 Jones at V = 1 V with a fast response speed of ≈180 µs under UV illumination, which is more than ≈105 times faster than that of the photodetectors without Ag NWs. Combined with finite‐difference time‐domain simulations, the results show that such superior performance is mainly attributed to the surface plasmon resonance effect, which leads to a strong light trapping and efficient carriers' transport process at the lateral porous GaN/Ag NWs interfaces. This approach paves a way to realize ultra‐sensitive UV photodetectors with fast response through plasmonic metal/semiconductor nanocomposites, which are desirable for applications in optical switches, optical logical operations, and lightwave communications.

show abstract

Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal—semiconductor—metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

Chen¹,

Yang²,

Chai³

et al. 2011

J. Semicond.

View full text Add to dashboard Cite

A two-dimensional model of a 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector has been established using a self-consistent numerical calculation method. The structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson's equation, the current continuity equation and the current density equation. The calculated results are verified with experimental data. With consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode heights (H ), spacings (S ) and widths (W ) reveals conclusive results in device design. The mechanisms responsible for variations of responsivity with those parameters are analyzed. The findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and width. In addition, the ultraviolet (UV)-to-visible rejection ratio is > 10 3 . By optimizing the device structure at 10 V bias, a responsivity as high as 180.056 mA/W, a comparable quantum efficiency of 77.93% and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H D 50 nm, S D 9 m and W D 3 m.

show abstract

p-GaN/n-Si HETEROJUNCTION PHOTODIODES

Cited by 6 publications

References 3 publications

The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure

Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal—semiconductor—metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

Contact Info

Product

Resources

About