p
           type doping of zinc oxide by arsenic ion implantation

Braunstein, G.; Muraviev, Andrey; Saxena, H.; Dhere, Neelkanth G.; Richter, V.; Kalish, R.

doi:10.1063/1.2128064

Cited by 67 publications

(42 citation statements)

References 27 publications

(18 reference statements)

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“…This issue is of particular relevance, since it has been reported that not more than 5-13% of incorporated As can be electrically activated in ZnO [4,5,7]. The maximum concentration of As in our implanted sample (around 7.6×10 18 cm −3 ) is comparable with the As concentration used in most other studies.…”

Section: Relevance Of Current Results With Respect To the Acceptor Mosupporting

confidence: 70%

“…In the case of the technologically promising II-VI compound ZnO, besides N [1,2] the heavy group-V elements P [1,2], As [2][3][4][5][6][7][8][9], and Sb [10][11][12] have been reported in the literature as possible p-type dopants. However, there is an ongoing debate whether for P, As, and Sb the p-type character results from these impuritities simply replacing O atoms, thus acting as simple "chemical" dopants [3,4,8], or is due to the formation of more complicated defect complexes [9,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

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We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive 73 As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. Arsenic in ZnO is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. In contrast, in GaN the preference of As for substitutional cation sites is less pronounced and about half of the implanted As atoms occupy Ga and the other half N sites. Apparently, the smaller size-mismatch between As and N and the chemical similarity of both elements make it feasible that As partly substitutes for N atoms.

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Section: Relevance Of Current Results With Respect To the Acceptor Mosupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

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“…This issue is of particular relevance, since it has for instance been reported that not more than 5-13% of incorporated As can be electrically activated in ZnO 13,15,16 . The maximum concentration of As in our implanted sample (≈ 8×10…”

Section: Relevance Of Current Results With Respect To the Acceptor Momentioning

confidence: 99%

“…Also based on DFT results, the experimentally observed ptype behaviour was attributed to the formation of electrically active acceptor complexes of the type P Zn −2V Zn , As Zn −2V Zn or Sb Zn −2V Zn, first predicted by Limpijumnong et al [44][45][46][47] for As and Sb and later by Shen et al 12 for P, the "complex acceptor model". While this concept is finding more and more acceptance 6,16,18,25,28,32,36,[38][39][40][41][42] , it is strongly disputed by others who support the point of view that P, As or Sb in ZnO act as simple chemical acceptors that replace oxygen 10,11,26,29,48 , the "chemical acceptor model". [52][53] .…”

Section: Introductionmentioning

confidence: 99%

“…In the meantime, As-doped p-type ZnO has been produced by means of pulsed laser deposition 7,[9][10][11][12] , hybrid beam deposition 13,14 , evaporation and sputtering 15 , ion implantation 16,17 , radiofrequency (RF) magnetron sputtering 18 , and metal-organic chemical vapor deposition (MOCVD) 19 , and devices include ultraviolet (UV) 14,17 and visual-infrared light emitting diodes (LEDs) 19 . Succesful doping methods for P include excimer laser processing 8 , diffusion 20,21 , RF sputter deposition [22][23][24][25][26] , molecular beam epitaxy (MBE) 27 , MOCVD 28 , and laser ablation 29 .…”

Section: Introductionmentioning

confidence: 99%

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Lattice location of the group V elements Sb, As, and P in ZnO

Wahl¹,

Correia

Mendonça³

et al. 2010

Oxide-Based Materials and Devices

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Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes 124 Sb, 73As and 33 P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or Sb Zn −2V Zn , As Zn −2V Zn or P Zn −2V Zn complexes (as suggested in the literature) are responsible for the acceptor action. However, the fact that the implanted group V ions prefer the substitutional Zn sites is clearly a strong argument in favour of the complex acceptor model, while it discourages the notion that Sb, As and P act as simple "chemical" acceptors in ZnO.

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Multifunctional Surface Engineering Applications

2011

Introduction to Surface Engineering and Functionally Engineered Materials

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p type doping of zinc oxide by arsenic ion implantation

Abstract: Braunstein, G.; Muraviev, A.; Saxena, H.; Dhere, N.; Richter, V.; and Kalish, R., "p type doping of zinc oxide by arsenic ion implantation" (

Cited by 67 publications

References 27 publications

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Lattice location of the group V elements Sb, As, and P in ZnO

Multifunctional Surface Engineering Applications

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