Packaging Effect on MEMS Pressure Sensor Performance

Krondorfer, Rudolf; Kim, Y.K.

doi:10.1109/tcapt.2007.898360

Cited by 61 publications

(23 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The elastic approximation for viscoelastic materials does not lead to satisfactory results and often overestimates the stresses. [1][2][3][4] The temperaturedependent part of viscoelastic properties is usually reported by using dynamic mechanical analysis (DMA) measurements at some fixed frequency, while the time-dependent part is often ignored. This could be a reasonable approximation if the temperature is well below the glass-transition temperature (T g ) and the time scale is short.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the Viscoelasticity of Molding Compounds in the Time Domain

Chae

Zhao

Edwards

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

Although polymer-based materials are widely used in microelectronics packaging and viscoelasticity is an intrinsic characteristic of polymers, viscoelastic properties of polymeric materials are often ignored in package stress analyses due to the difficulty in measuring these properties. However, it is necessary to consider the viscoelastic behavior when an accurate stress model is required. Viscoelastic properties of materials can be characterized in either the time or the frequency domain. In this study, stress relaxation experiments were performed on a molding compound in the time domain. A thermorheologically simple model was assumed to deduce the master curve of relaxation modulus using the time-temperature equivalence assumption. A Prony series expansion was used to express the material's relaxation behavior. Two methods to determine the Prony pairs and shift factors were compared. After they were determined, the master curve at a reference temperature was shifted to every measured temperature for comparison with experimental data.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of the Viscoelasticity of Molding Compounds in the Time Domain

Chae

Zhao

Edwards

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…MEMS capacitive pressure sensor based silicon carbide (3C-SiC) is expertly designed adaptations of a simple, durable and fundamentally stable with the electrical capacitor. The designed consists a compact housing contains two closely spaced (air gap) parallel, electrically-isolated metallic surfaces which is one of essentially a diaphragm capable of slight flexing under applied pressure [6]. The diaphragm is constructed of a thin layer of 3C-SiC is deposited using LPCVD techniques on silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °C

Marsi

Majlis

Hamzah

et al. 2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

View full text Add to dashboard Cite

In this paper, we present development of MEMS capacitive pressure sensor based silicon carbide (3C-SiC) materials. The sensor is made up of four elements: a 3C-SiC diaphragm, silicon substrate, a reliable stainless steel (SS) o-ring and (SS) vacuum clamper as the package. The designed are inherent simplicity and ruggedness of this physical configuration that acceptably performed for extreme environment applications such as in gas turbine engine. This study reported a reliability testing of a prototype package MEMS capacitive pressure sensor verified up to 500 °C through high temperature lab testing. At 500 °C, the reliability test results show that the sensitivity of 0.826 pF/MPa is achieved. Experimentally, sensor nonlinearity of 0.61 % is found with hysteresis of 3.13 %. The maximum temperature coefficient of output change is 0.073 %/°C measured at 5 MPa.

show abstract

“…Also, chemical shrinkage of adhesives and mold compound need to be taken into account [3]. These stresses often significantly affect device performance, such as sensitivity, reduction of the resonance Q-factor or resonance frequency shift, as well as long-term stability and reliability [4][5][6]. In order to overcome these thermo-mechanical stresses, various approaches have been reported in literature, e.g.…”

Section: Introductionmentioning

confidence: 99%