[Papers] Single Exposure Type Wide Dynamic Range CMOS Image Sensor With Enhanced NIR Sensitivity

Abstract

In new markets such as in-vehicle cameras, surveillance camera and sensing applications that are rising rapidly in recent years, there is a growing need for better NIR sensing capability for clearer night vision imaging, in addition to wider dynamic range imaging without motion artifacts and higher signal-to-noise (S/N) ratio, especially in low-light situation. We have improved the previously reported single exposure type wide dynamic range CMOS image sensor (CIS), by optimizing the optical structure such as micro lens shape, forming the absorption structure on the Si surface and adding the back side deep trench isolation (BDTI). We achieved high angular response of 91.4%, high Gr/Gb ratio of 98.0% at ±20°, 610nm, and high NIR sensitivity of QE 35.1% at 850nm, 20.5% at 940nm without degrading wide dynamic range performance of 91.3dB and keeping low noise floor of 1.1e-rms.

A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor

“…The authors reported an over 87 dB SEHDR CIS with a 3.0 µm pixel introducing a high full-well capacity (FWC) photodiode (PD) and a multiple gain pixel technology [1][2][3][4]. In the previous sensor, photoelectrons accumulated in the photodiode are read out two times in different gains, then combined into an HDR signal.…”

[Paper] 4.0 μm Stacked Voltage Mode Global Shutter Pixels with Single Exposure High Dynamic Range and Phase Detection Auto Focus Capability

“…Recently, some all-pixel PDAF CISs with the dual-PD type pixel [27]- [31] Additionally, a near infrared (NIR) enhancement technology [32] was employed for these two types of top layer pixels.…”