Parallel transport in a quasi-two-dimensional electron gas subjected to an in-plane magnetic field

Tang, Hui; Butcher, P N

doi:10.1088/0022-3719/21/17/020

Cited by 26 publications

(7 citation statements)

References 9 publications

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“…To explain our findings we propose a model based on finite thickness effects which, in combination with B , lead to an increase of the effective mass. This increase was studied theoretically [16][17][18][19][20][21] and confirmed in experiments examining the temperature damping of the SdHO amplitude 22 and the shift of magnetoplasmon resonances. 23,24 Following Ref.…”

mentioning

confidence: 78%

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

et al. 2012

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We report on quantum magneto-oscillations in an ultra-high mobility GaAs/AlGaAs quantum well at very high (≥ 87 • ) tilt angles. Unlike previous studies, we find that the spin and cyclotron splittings become equal over a continuous range of angles, but only near certain, angle-dependent filling factors. At high enough tilt angles, Shubnikov-de Haas oscillations reveal a prominent beating pattern, indicative of consecutive level crossings, all occurring at the same angle. We explain these unusual observations by an in-plane field-induced increase of the carrier mass, which leads to accelerated, filling factor-driven crossings of spin sublevels in tilted magnetic fields.

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confidence: 78%

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

et al. 2012

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“…In the zero field limit, the single subband transport lifetime differs from the quantum lifetime by the appearance of an additional (1 − cosφ) weighting factor in the integrand of (8). In the presence of a parallel magnetic field, there unfortunately is no similar expression which can be used to define a transport lifetime.…”

Section: B Evaluation Of the Scattering Elementsmentioning

confidence: 99%

“…There have been a few theoretical considerations of this problem. The first calculation of transport in the presence of a parallel magnetic field was carried out by Tang and Butcher 8,9 who considered a model in which the 2DEG is confined by a harmonic potential. The electronic states and energy dispersion can be obtained analytically for this model which simplifies the solution of the transport problem.…”

Section: Introductionmentioning

confidence: 99%

Transverse magnetoresistance of GaAs/AlxGa1−
Heisz
¹
,
Zaremba
²

1996
Phys. Rev. B
23
1
14
0
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We have calculated the resistivity of a GaAs/AlGaAs heterojunction in the presence of both an in-plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into account fully the distortion of the Fermi contour which is induced by the parallel magnetic field. The scattering of electrons is assumed to be due to remote ionized impurities. A positive magnetoresistance is found as a function of the perpendicular component, in good qualitative agreement with experimental observations. The main source of this effect is the strong variation of the electronic scattering rate around the Fermi contour which is associated with the variation in the mean distance of the electronic states from the remote impurities. The magnitude of the positive magnetoresistance is strongly correlated with the residual acceptor impurity density in the GaAs layer. The carrier lifetime anisotropy also leads to an observable anisotropy in the resistivity with respect to the angle between the current and the direction of the in-plane magnetic field.

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“…Conductivity of a quasi-two-dimensional electron gas (Q2DEG) is usually calculated by means of a quasi-classical 2D Boltzmann equation (see, e.g., Stern and Howard 1967, Siggia and Kwok 1970, Stern 1976, Ando et al 1982, Cantrell and Butcher 1985, Tang and Butcher 1988a, 1988b, Das Sarma and Hwang 1999. Quantum corrections to the 2D conductivity are assumed to be only due to the weak localization or interaction mechanisms (see, e.g., the review by Kawaji 1994).…”

Section: Introductionmentioning

confidence: 99%

Quantum effects in the electron current flow in a quasi-two-dimensional electron gas

Levanda

Fleurov

2002

J. Phys.: Condens. Matter

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We consider the role of the third dimension in the conductivity of a quasi-two-dimensional electron gas (Q2DEG). If the transverse correlation radius of the scattering potential is smaller than the width of the channel, i.e. the width of the transverse electron density distribution, then virtual scattering to higher levels of the confinement potential becomes important, which causes a broadening of the current flow profile. The resulting conductivity is larger than that obtained from a quasi-classical two-dimensional Boltzmann equation. A magnetic field, parallel to the driving electric field, effectively adds strength to the confining potential. As a result, the width of the current flow profile decreases and a positive longitudinal magnetoresistivity of the Q2DEG is expected.

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Parallel transport in a quasi-two-dimensional electron gas subjected to an in-plane magnetic field

Cited by 26 publications

References 9 publications

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

Transverse magnetoresistance of GaAs/AlxGa1−
Heisz
¹
,
Zaremba
²

1996
Phys. Rev. B
23
1
14
0
View full text Add to dashboard Cite

Quantum effects in the electron current flow in a quasi-two-dimensional electron gas

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Parallel transport in a quasi-two-dimensional electron gas subjected to an in-plane magnetic field

Cited by 26 publications

References 9 publications

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

Transverse magnetoresistance of GaAs/AlxGa1−Heisz1, Zaremba2 1996Phys. Rev. B231140View full textAdd to dashboardCite

Quantum effects in the electron current flow in a quasi-two-dimensional electron gas

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Product

Resources

About

Transverse magnetoresistance of GaAs/AlxGa1−
Heisz
¹
,
Zaremba
²

1996
Phys. Rev. B
23
1
14
0
View full text Add to dashboard Cite