Parameter evaluation in automated digital deep-level transient spectroscopy (DLTS)

Nener, Brett; Lai, S.T.; Faraone, Lorenzo; Nassibian, A.G.

doi:10.1109/19.252526

Cited by 7 publications

(2 citation statements)

References 17 publications

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“…Many trap characterization techniques are cited in the literature; the largely used one is the DLTS [3] [4]. This method gives directly the trap emission (or capture) rate in a material.…”

Section: Methods Of Traps Measurement In the Structurementioning

confidence: 99%

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Improved mathematical model for the investigation of deep traps into semiconductor devices: application to Metamorphic HEMT

Jaafar¹,

Aupetit-Berthelemot²,

Cluzeau³

et al. 2009

2009 74th ARFTG Microwave Measurement Conference

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Several parasitic effects that penalize III-V IC and RF transistors performances are directly linked to deep level trapping mechanisms into the structure. The analysis of these phenomena is correlated to the presence of traps signature related to intrinsic and/or process dependent defects. We propose in this paper a survey of a non-linear measurement method namely the isothermal relaxation method used to extract trap signatures. We improve the effectiveness of the mathematical part of the method to obtain more precise results in a more efficient way. An application of our software to Metamorphic HEMTs and a comparison to results obtained with the DLTS method is proposed.

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“…Many trap characterization techniques are cited in the literature; the largely used one is the DLTS [3] [4]. This method gives directly the trap emission (or capture) rate in a material.…”

Section: Methods Of Traps Measurement In the Structurementioning

confidence: 99%

“…So it becomes possible to extract a transient containing multiexponentials due to the presence of more than one trap [4]. Nevertheless, it still takes a long time to achieve measures for large interval of temperature.…”

Section: A Dlts Principlementioning

confidence: 99%

Improved mathematical model for the investigation of deep traps into semiconductor devices: application to Metamorphic HEMT

Jaafar¹,

Aupetit-Berthelemot²,

Cluzeau³

et al. 2009

2009 74th ARFTG Microwave Measurement Conference

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show abstract

III-Vs in Australia

Tansley

Chin

1994

III-Vs Review

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Annealing behavior of deep-level defects in 1 MeV electron irradiated GaAs

Lai

Nener

1994

Journal of Applied Physics

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Articles you may be interested inDeep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells J. Appl. Phys. 98, 093701 (2005); 10.1063/1.2115095 Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation Isochronal annealing behavior of deep-level defects in 1 MeV electron irradiated vapor phase epitaxy GaAs was studied through deep level transient spectroscopy measurements. As the annealing temperature was increased, the activation energy of the ELZA trap remained at EC-O.823 eV, whereas the ELZ-B trap (EC-O.843 eV) transformed into a new trap, ELN-1 (Q-O.870 eV), and linally into another new trap, ELN-2 (E,-0.891 eV) before returning to the single EL2-A level at a 270 "C annealing temperature. The EL6 trap (Q-O.335 eV) varied similarly, transforming into EC-O.357 eV (Pl) before staying constant at E,-0.396 eV (ELN3) after a 270 "C! annealing temperature. The capture cross sections of EL2-B and EL6 increased by an order of magnitude during the annealing. These results suggest that the ELZB trap which was split from the EL2 center by the 1 MeV electrons could be related to EL6. Traps El and E2 remain at EC-O.032 eV and EC--O.129 eV, respectively, throughout the annealing, before annihilation at a 290 "C annealing temperature. This result indicates that the atomic structures of El and E2 defects could be related. The EL3 (EC-O.420 eV) is transformed into a new trap, ELN-4 (EC-O.456 eV), and then into &-OS0 eV (P2) during annealing. The free carrier concentration of the irradiated sample increases rapidly with annealing temperature and returns back to the starting free carrier concentration due to the rapid annealing rates of the electron induced defects. 2354

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Parameter evaluation in automated digital deep-level transient spectroscopy (DLTS)

Cited by 7 publications

References 17 publications

Improved mathematical model for the investigation of deep traps into semiconductor devices: application to Metamorphic HEMT

Improved mathematical model for the investigation of deep traps into semiconductor devices: application to Metamorphic HEMT

III-Vs in Australia

Annealing behavior of deep-level defects in 1 MeV electron irradiated GaAs

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